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Physics Exam  >  Physics Test  >  IIT JAM Mock Test Series 2027  >  IIT JAM Physics Mock Test - 9 - Physics MCQ

IIT JAM Physics Mock Test - 9 Free Online Test 2026


Full Mock Test & Solutions: IIT JAM Physics Mock Test - 9 (60 Questions)

You can boost your Physics 2026 exam preparation with this IIT JAM Physics Mock Test - 9 (available with detailed solutions).. This mock test has been designed with the analysis of important topics, recent trends of the exam, and previous year questions of the last 3-years. All the questions have been designed to mirror the official pattern of Physics 2026 exam, helping you build speed, accuracy as per the actual exam.

Mock Test Highlights:

  • - Format: Multiple Choice Questions (MCQ)
  • - Duration: 180 minutes
  • - Total Questions: 60
  • - Analysis: Detailed Solutions & Performance Insights

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IIT JAM Physics Mock Test - 9 - Question 1
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In a common emitter amplifier, the unbypassed emitter resistance provide:-

Detailed Solution: Question 1

There are two circuits with emitter resistance unbypassed. In CE amplifier the output is taken from collector. Here, the feedback is current series.

IIT JAM Physics Mock Test - 9 - Question 2
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In the following given circuit, calculate the value of "Vce" if the transistor is working in cut off:-

Detailed Solution: Question 2

As the transistor is working in cut off region.

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IIT JAM Physics Mock Test - 9 - Question 3
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A change in the value of the emitter resistance (Re), in a differential amplifier:-

Detailed Solution: Question 3

(Emitter resistance only affects the common mode output & thus the common mode gain)

IIT JAM Physics Mock Test - 9 - Question 4
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The ripple factor of a power supply is given by (symbols have the usual meaning)

Detailed Solution: Question 4

The magnitude of the ripple is given by the ratio of the root mean square value of the ac component to the mean value of the total & is usually expressed as a percentage. This is known as ripple factor.

IIT JAM Physics Mock Test - 9 - Question 5
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A diode has a reverse saturation current Is = 10-10 A & non-ideality factor η = 2. If diode voltage is 0.9 V then diode current is:-

Detailed Solution: Question 5


IIT JAM Physics Mock Test - 9 - Question 6
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An op-amp has a slow-rate 5V/μs. The largest sinwave output voltage possible at a frequency of 1MHz is:-

Detailed Solution: Question 6


IIT JAM Physics Mock Test - 9 - Question 7
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The form factor (in case of resistive load) for a full wave rectifier is:-

Detailed Solution: Question 7

IIT JAM Physics Mock Test - 9 - Question 8
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The static characteristic of an adequately forward biased p-n junction is a straight line, if the plot is of:

Detailed Solution: Question 8

Static characteristic of a forward biased p-n junction :-

Thus straight line is : log I v/s V

IIT JAM Physics Mock Test - 9 - Question 9
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The ideal characteristic of a stabilizer is:-

Detailed Solution: Question 9

Voltage stabilizer is a zener diode or other device that suppresses variation in a DC voltage. It is often used in place of capacitor, across a cathode biasing resistor.

IIT JAM Physics Mock Test - 9 - Question 10
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Silicon diode is less suited for low voltage rectifier operation, because:-

Detailed Solution: Question 10

Solicon diode is less suited for low voltage rectifier operation because its break down voltage is high

IIT JAM Physics Mock Test - 9 - Question 11
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The breakdown voltage of a transistor with its base open is BVCEO & that with emitter open is BVCBO, then

Detailed Solution: Question 11

Become the emitter is most heavily doped region in the transistor. It is about 40 to 50% BVCBO

IIT JAM Physics Mock Test - 9 - Question 12
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In a bipolar transistor at room temperature, if the emitter current is doubled the voltage across its base emitter junction will

Detailed Solution: Question 12

In a BJT emitter current is doubled and one has to find the base emitter voltage, so we consider the p – n junction formed by emitter and base. The junction current is given by

IIT JAM Physics Mock Test - 9 - Question 13
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What is the current through 100Ω resistance is the circuit shown below?

Detailed Solution: Question 13

The current will not pass through Z2

Hence, 6 = I(150+100)
6 = 250 I

= 0.024 A

IIT JAM Physics Mock Test - 9 - Question 14
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Which of the following statements if not true regarding the magnitude of barrier potential of a p-n junction.

Detailed Solution: Question 14

When a p-type semiconductor having holes as majority carrier is clamped with a n-type semiconductor having electron as 


Majority carrier some electrons from n side goes to p side and some holes goes to p side and some holes goes to n side, thus created a potential barrier, which 
(i) Depends on temperature
(ii) Depends on Fermi level
(iii) Forbidden energy gap Eg
(iv) Majority carriers.

IIT JAM Physics Mock Test - 9 - Question 15
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If in a p-n junction diode, a square input signal of 6V is applied see figure be-low, what is the value of the output signal across 'RL'?

Detailed Solution: Question 15




Thus output curve will be:- 

IIT JAM Physics Mock Test - 9 - Question 16
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The circuit shown below has two oppositely connected ideal diodes in parallel. What is the current flowing in the circuit?

Detailed Solution: Question 16


IIT JAM Physics Mock Test - 9 - Question 17
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The input signal given to a CE amplifier having a voltage gain of 150 is V1 = 2cos(15t+100). The corresponding output signal is:

Detailed Solution: Question 17

The voltage gain is defined as:
12

IIT JAM Physics Mock Test - 9 - Question 18
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In the following circuit, the voltage across & the current through the 2kΩ resistance are: 

Detailed Solution: Question 18

Zener diode acts a DC voltage stabilizer. Hence the voltage developed across 

IIT JAM Physics Mock Test - 9 - Question 19
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In the following circuit Tr1 & Tr2 are identical transistors having VBE = 0.7V. The current passing through the transistor Tr2 is :

Detailed Solution: Question 19

Applying KVL, we get

IIT JAM Physics Mock Test - 9 - Question 20
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A bipolar junction transistors with one junction forward biased & either the collector or emitter open, operated in the :

Detailed Solution: Question 20

When one junction is forward biased either collector or emitter open, operates in pinch-off region.

IIT JAM Physics Mock Test - 9 - Question 21
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A  silicon diode is in series with a 1.0 kΩ resistor and a 5V battery. If the anode is connected to the positive battery terminal, the cathode voltage with respect to the negative battery terminal is:

Detailed Solution: Question 21

The cathode voltage with respect to the negative battery terminal is VBias-VF for silicon VF = 0.7 V, VBias = 5V

IIT JAM Physics Mock Test - 9 - Question 22
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Which one of the following statement is true for a semiconductor p-n junction with no external bias?

Detailed Solution: Question 22

In case of SC p-n junction with no external bias: the structure looks like


IIT JAM Physics Mock Test - 9 - Question 23
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An intrinsic semiconducting sample has an energy gap of 0.38 eV; calculate the probability at 100°C that the lowest level in the conduction band will be occupied.

Detailed Solution: Question 23

Correct option: D.

For an intrinsic semiconductor the occupation probability at the conduction-band minimum is given by f(Ec) = 1 / [1 + exp((Ec - Ef)/kT)].

For an intrinsic material, to a good approximation Ec - Ef ≈ Eg/2.

Eg = 0.38 eV, so Ec - Ef = 0.19 eV.

k = 8.617 × 10-5 eV/K and T = 100°C = 373 K, hence kT = 8.617 × 10-5 × 373 ≈ 0.03215 eV.

Therefore (Ec - Ef)/kT = 0.19 / 0.03215 ≈ 5.91.

exp(5.91) ≈ 3.699 × 102, so f(Ec) = 1 / (1 + 3.699 × 102) ≈ 2.70 × 10-3.

This value is in agreement with option D (given as 2.69 × 10-3, the slight difference is due to rounding).



IIT JAM Physics Mock Test - 9 - Question 24
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Which of the following output curves correctly  represent the output of the given clamper circuit:-

Detailed Solution: Question 24

The correct answer is option B.

IIT JAM Physics Mock Test - 9 - Question 25
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Which relation is correct for intrinsic semiconductor?
(where  conducting of material μn and μp is the electron mobility and hole mobility respectively.

Detailed Solution: Question 25

The correct relation is given by,

σ=z exp(-Eg/2KBT)e(μn+μp)

and, nc=2(2πm,eKBT/h2)3/2 exp[(Ef-Ec)/KBT]

The correct answer is option C.

IIT JAM Physics Mock Test - 9 - Question 26
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If the transistor of an amplifier is changed & the gain is increased by two times, which of the following Parameters will have the higher increase in its value :-

Detailed Solution: Question 26

IIT JAM Physics Mock Test - 9 - Question 27
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Mobility of free electrons depends on temperature variation in case of a semiconductor as:-

Detailed Solution: Question 27

IIT JAM Physics Mock Test - 9 - Question 28
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The graph of   where P → Resistinity & 'T' is the temperature :-

Detailed Solution: Question 28

IIT JAM Physics Mock Test - 9 - Question 29
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In a germanium semiconductor material used in transistors, mobility of electrons is 3900 cm2N. How much velocity do they have?

Detailed Solution: Question 29

The ration of drift velocity to the applied electric field is known as mobility of the charge.

IIT JAM Physics Mock Test - 9 - Question 30
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A CE amplifier has voltage gain of 50, an input impedance of 1000Ω and an output impedance of 200Ω. The power gain of the amplifier will be :

Detailed Solution: Question 30

The power gain is defined as ratio of output power to the input power and is given power gain = Voltage gain x current gain = 

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About this Physics Mock Test

This mock test contains 60 questions designed to replicate the pattern, difficulty level and time pressure of the actual Physics exam. It is part of IIT JAM Physics Mock Test Series 2027 on EduRev, covering all the topics that are being asked as per the current Physics syllabus. Attempting this test under timed conditions will help you assess your exam readiness, identify subject-wise weak areas, and improve your speed and accuracy before the actual exam.

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