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IIT JAM Physics Mock Test - 9 - Physics MCQ


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30 Questions MCQ Test IIT JAM Physics Mock Test Series 2025 - IIT JAM Physics Mock Test - 9

IIT JAM Physics Mock Test - 9 for Physics 2024 is part of IIT JAM Physics Mock Test Series 2025 preparation. The IIT JAM Physics Mock Test - 9 questions and answers have been prepared according to the Physics exam syllabus.The IIT JAM Physics Mock Test - 9 MCQs are made for Physics 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for IIT JAM Physics Mock Test - 9 below.
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IIT JAM Physics Mock Test - 9 - Question 1

In a common emitter amplifier, the unbypassed emitter resistance provide:-

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 1

There are two circuits with emitter resistance unbypassed. In CE amplifier the output is taken from collector. Here, the feedback is current series.

IIT JAM Physics Mock Test - 9 - Question 2

In the following given circuit, calculate the value of "Vce" if the transistor is working in cut off:-

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 2

As the transistor is working in cut off region.

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IIT JAM Physics Mock Test - 9 - Question 3

A change in the value of the emitter resistance (Re), in a differential amplifier:-

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 3

(Emitter resistance only affects the common mode output & thus the common mode gain)

IIT JAM Physics Mock Test - 9 - Question 4

The ripple factor of a power supply is given by (symbols have the usual meaning)

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 4

The magnitude of the ripple is given by the ratio of the root mean square value of the ac component to the mean value of the total & is usually expressed as a percentage. This is known as ripple factor.

IIT JAM Physics Mock Test - 9 - Question 5

A diode has a reverse saturation current Is = 10-10 A & non-ideality factor η = 2. If diode voltage is 0.9 V then diode current is:-

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 5


IIT JAM Physics Mock Test - 9 - Question 6

An op-amp has a slow-rate 5V/μs. The largest sinwave output voltage possible at a frequency of 1MHz is:-

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 6


IIT JAM Physics Mock Test - 9 - Question 7

The form factor (in case of resistive load) for a full wave rectifier is:-

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 7

IIT JAM Physics Mock Test - 9 - Question 8

The static characteristic of an adequately forward biased p-n junction is a straight line, if the plot is of:

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 8

Static characteristic of a forward biased p-n junction :-

Thus straight line is : log I v/s V

IIT JAM Physics Mock Test - 9 - Question 9

The ideal characteristic of a stabilizer is:-

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 9

Voltage stabilizer is a zener diode or other device that suppresses variation in a DC voltage. It is often used in place of capacitor, across a cathode biasing resistor.

IIT JAM Physics Mock Test - 9 - Question 10

Silicon diode is less suited for low voltage rectifier operation, because:-

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 10

Solicon diode is less suited for low voltage rectifier operation because its break down voltage is high

IIT JAM Physics Mock Test - 9 - Question 11

The breakdown voltage of a transistor with its base open is BVCEO & that with emitter open is BVCBO, then

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 11

Become the emitter is most heavily doped region in the transistor. It is about 40 to 50% BVCBO

IIT JAM Physics Mock Test - 9 - Question 12

In a bipolar transistor at room temperature, if the emitter current is doubled the voltage across its base emitter junction will

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 12

In a BJT emitter current is doubled and one has to find the base emitter voltage, so we consider the p – n junction formed by emitter and base. The junction current is given by

 

IIT JAM Physics Mock Test - 9 - Question 13

What is the current through 100Ω resistance is the circuit shown below?

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 13

The current will not pass through Z2

Hence, 6 = I(150+100)
6 = 250 I

= 0.024 A

IIT JAM Physics Mock Test - 9 - Question 14

Which of the following statements if not true regarding the magnitude of barrier potential of a p-n junction.

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 14

When a p-type semiconductor having holes as majority carrier is clamped with a n-type semiconductor having electron as 


Majority carrier some electrons from n side goes to p side and some holes goes to p side and some holes goes to n side, thus created a potential barrier, which 
(i) Depends on temperature
(ii) Depends on Fermi level
(iii) Forbidden energy gap Eg
(iv) Majority carriers.

IIT JAM Physics Mock Test - 9 - Question 15

If in a p-n junction diode, a square input signal of 6V is applied see figure be-low, what is the value of the output signal across 'RL'?

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 15




Thus output curve will be:- 

IIT JAM Physics Mock Test - 9 - Question 16

The circuit shown below has two oppositely connected ideal diodes in parallel. What is the current flowing in the circuit?

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IIT JAM Physics Mock Test - 9 - Question 17

The input signal given to a CE amplifier having a voltage gain of 150 is V1 = 2cos(15t+100). The corresponding output signal is:

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 17

The voltage gain is defined as:
12

IIT JAM Physics Mock Test - 9 - Question 18

In the following circuit, the voltage across & the current through the 2kΩ resistance are: 

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 18

Zener diode acts a DC voltage stabilizer. Hence the voltage developed across 

IIT JAM Physics Mock Test - 9 - Question 19

In the following circuit Tr1 & Tr2 are identical transistors having VBE = 0.7V. The current passing through the transistor Tr2 is :

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 19

Applying KVL, we get

IIT JAM Physics Mock Test - 9 - Question 20

A bipolar junction transistors with one junction forward biased & either the collector or emitter open, operated in the :

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 20

When one junction is forward biased either collector or emitter open, operates in pinch-off region.

IIT JAM Physics Mock Test - 9 - Question 21

A  silicon diode is in series with a 1.0 kΩ resistor and a 5V battery. If the anode is connected to the positive battery terminal, the cathode voltage with respect to the negative battery terminal is:

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 21

The cathode voltage with respect to the negative battery terminal is VBias-VF for silicon VF = 0.7 V, VBias = 5V

IIT JAM Physics Mock Test - 9 - Question 22

Which one of the following statement is true for a semiconductor p-n junction with no external bias?

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 22

In case of SC p-n junction with no external bias: the structure looks like


IIT JAM Physics Mock Test - 9 - Question 23

An intrinsic semiconducting sample has an energy gap of 0.38eV, calculate the probability at 1000C that the lowest level in the conduction band will be occupied.

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IIT JAM Physics Mock Test - 9 - Question 24

Which of the following output curves correctly  represent the output of the given clamper circuit:-

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 24

The correct answer is option B.

IIT JAM Physics Mock Test - 9 - Question 25

Which relation is correct for intrinsic semiconductor?
(where  conducting of material μn and μp is the electron mobility and hole mobility respectively.

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 25

The correct relation is given by,

σ=z exp(-Eg/2KBT)e(μnp)

and, nc=2(2πm,eKBT/h2)3/2 exp[(Ef-Ec)/KBT]

The correct answer is option C.

IIT JAM Physics Mock Test - 9 - Question 26

If the transistor of an amplifier is changed & the gain is increased by two times, which of the following Parameters will have the higher increase in its value :-

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IIT JAM Physics Mock Test - 9 - Question 27

Mobility of free electrons depends on temperature variation in case of a semiconductor as:-

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IIT JAM Physics Mock Test - 9 - Question 28

The graph of   where P → Resistinity & 'T' is the temperature :-

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IIT JAM Physics Mock Test - 9 - Question 29

In a germanium semiconductor material used in transistors, mobility of electrons is 3900 cm2N. How much velocity do they have?

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The ration of drift velocity to the applied electric field is known as mobility of the charge.

IIT JAM Physics Mock Test - 9 - Question 30

A CE amplifier has voltage gain of 50, an input impedance of 1000Ω and an output impedance of 200Ω. The power gain of the amplifier will be :

Detailed Solution for IIT JAM Physics Mock Test - 9 - Question 30

The power gain is defined as ratio of output power to the input power and is given power gain = Voltage gain x current gain = 

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