Test: BJT & FET - Electrical Engineering (EE) MCQ

The CE amplifier circuit are preferred over CB amplifier circuit because they have

5. I npn - transistors are preferred over pnptransistors?

μ_F & μ_I denotes the forward and Inverted mode current gains of a BJT, which one of the following is correct ?

The Early effect in a bipolar junction transistor iscaused by

The phenomenon known as "Early effect" in abipolar transistor refers to a reduction of theeffective base-width caused by

The breakdown voltage of a transistor with its base open is BV_CBOthen

For a BJT, the common base current gain a =0.98 and the collector base junction reverse biassaturation current ICO = 0.6mA. This BJT isconnected in the common emitter mode andoperated in the active region with a base drivecurrent I_B = 20mA. The collector current I_C forthis mode of operation is

The action of a JFET in its equivalent circuit canbest be represented as a

In a biased JFET, the shape of the channel is as shown in the given figure because

Consider the following statements:
FETs when compared to BJTs have
1. High input resistance
2. Current follow due to majority carries
3. Low input impedance
4. Current flow due to minority carries

Q.

Which of the statements given above correct?

Compared to the bipolar junction transistor, a JFET;
1. Has a larger gain bandwidth production
2. Is less noisy
3. Has less input resistance
4. Has current flow due to only majority carriers

A FET is a better chopper than a BJT because ithas

The drain - source voltage at which drain currentbecomes nearly constant is called

The pinch off voltage V_P = – 6V for P – channel JFET. If V_GS = + 2V, what is the value of V_DS at which it will enter into saturation region ?

An n = channel JFET has I_DSS = 2mA, Vp = – 4V; Its transconductance gm (in mA/V) for an applied gate to source voltage V_GS of – 2V is

An N- channel JFET, having a pinch – off voltage (V_p) of – 5V shows a transconductance (g_m) of 1mA/V. When the applied gate to source voltage (V_GS) is – 1V. Its maximum transconductance(in mA/V) is

The data sheet for a certain JFET (Junction Field Effect Transistor) indicates that I_DSS (drain to source current with gate shorted) = 15 mA and V_GS (off) (Cut – off value of gate to source voltage) = – 5V.

JFET has main drawback of

Thermal runaway is not encountered product

A junction FET, can be used as a voltage variableresistor.

When transistors are used in digital circuits they usually operate in the:

The input/output relationship of the common-collector and common-base amplifiers is: