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Test: Basic Electronics - 3 - Electrical Engineering (EE) MCQ
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25 Questions MCQ Test Electrical Engineering SSC JE (Technical) - Test: Basic Electronics - 3
Test: Basic Electronics - 3 for Electrical Engineering (EE) 2024 is part of Electrical Engineering SSC JE (Technical) preparation. The Test: Basic Electronics - 3 questions and answers have been
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Test: Basic Electronics - 3 - Question 5
In a good conductor, the energy gap between the conduction band and the valence band is –
Test: Basic Electronics - 3 - Question 7
The forbidden energy band gap in conductors, semiconductor and insulators are EG1, EG2 and EG3 respectively then –
Test: Basic Electronics - 3 - Question 9
Three semiconductors are arranged in the increasing order of their energy gap as follows. The correct arrangement is –
Test: Basic Electronics - 3 - Question 10
P-type semiconductor is prepared by doping silicon or germanium semoconductor by –
Test: Basic Electronics - 3 - Question 11
N-type semiconductor is obtained when silicon or germanium is doped by –
Test: Basic Electronics - 3 - Question 14
The electrical conductivity of a pure silicon or germanium sample can be increased by
Test: Basic Electronics - 3 - Question 16
The addition of a very small quantity of aluminium to a silicon or germanium crystal makes it–
Test: Basic Electronics - 3 - Question 17
Doping of a semiconductor with small traces of impurity atoms generally changes the resistivity as follows–
Detailed Solution for Test: Basic Electronics - 3 - Question 17
Test: Basic Electronics - 3 - Question 19
An intrinsic semiconductor at the absolute zero of temperature–
Test: Basic Electronics - 3 - Question 21
The majority carriers of electricity in a N-type semiconductor are –
Test: Basic Electronics - 3 - Question 22
The addition of pentavalent impurity to a semiconductor creates more–
Test: Basic Electronics - 3 - Question 24
The width of the depletion layer in a P-N junction diode–
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