You can prepare effectively for Electronics and Communication Engineering (ECE) Analog Circuits with this dedicated MCQ Practice Test (available with solutions) on the important topic of "Test: MOSFET In Small Signal Operation ". These 10 questions have been designed by the experts with the latest curriculum of Electronics and Communication Engineering (ECE) 2026, to help you master the concept.
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An NMOS technology has μnCox = 50 μA/V2 and Vt = 0.7 V. For a transistor with L = 1μm, find the value of W that results in gm 1mA/V at ID = 0.5 mA.
Consider an NMOS transistor having kn= 2 mA/V2. Let the transistor be biased at VOV = 1V. For operation in saturation, what dc bias current ID results? If a +0.1-V signal is superimposed on VGS, find the corresponding increment in collector current by evaluating the total collector current ID and subtracting the dc bias current ID.
We know ID =1/2 kn (VGS + vgs – Vt)2. Let the signal vgs be a sine wave with amplitude Vgs, and substitute vgs = Vgs sin ω t in Eq.(5.43). Using the trigonometric identity show that the ratio of the signal at frequency 2ω to that at frequency ω , expressed as a percentage (known as the second-harmonic distortion) is
If in a particular application Vgs is 10 mV, find the minimum overdrive voltage at which the transistor should be operated so that the second-harmonic distortion is kept to less than 1%.
(Q.5-Q.7) An NMOS amplifier is to be designed to provide a 0.50-V peak output signal across a 50-kΩ load that can be used as a drain resistor.
If a gain of at least 5 V/V is needed, what value of gm is required?
Detailed Solution: Question 5
Using a dc supply of 3 V, what values of ID and VOV would you choose?
What W/L ratio is required if μnCox = 200 μA/V2?
(Q.8-Q.9) For a 0.8-μm CMOS fabrication process: Vtn= 0.8 V, Vtp = −0.9 V, μnCox = 90 μA/V2, μpCox = 30 μA/V2, Cox = 1.9 fF/μm2, VA (n-channel devices) = 8L (μm), and |VA| (p-channel devices) = 12L (μm).
Q. Find the small-signal model parameters (gm, ro and gmb) for an NMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and |VSB| = 1V.
Find the small-signal model parameters (gm, ro and gmb) for a PMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and |VSB| = 1V.
The overdrive voltage at which each device must be operating is
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