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The correct sequence of band gaps of germanium siliconand gallium arsenidewill :
Correct Answer :- C
Explanation : It generally refers to the energy difference (in electron volts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. The energy band gaps of silicon and germanium are 1.1eV and 0.
The band gap of GaAs results in efficient emission of infrared light at 1.424 eV.
Identify the condition for a transistor to act as an amplifier.
Explanation: In order to use a transistor as an amplifier the emitter-base junction is set up as forward biased and the base-collector junction is set up as reverse biased. This is the criteria for making a transistor function as an amplifier.
A zener diode is also a p-n junction diode. It can be used as :
A Zener diode is used to get constant DC voltage from a DC unregulated output of a rectifier.
The electrical conductivity of a semi-conductor in cases when electromagnetic radiation of wave length shorter than 2480 nm is incident on it. What is the band - gap Mark -0 .33 out of 1.00 (in eV) for the semiconductor?
(take h = 6.67 x10-34 J-s).
If in a p-n junction diode, a square input signal of 8V is applied (see figure below), what is the value of output signal across RL?
This is a general case of half-wave rectifier. For positive signal, the diode will be in ON state and signal passes through it but for negative half of signal, diode is reverse biased and it goes in non-conducting state and signal is blocked.
he correct answer is:
The impurity atoms with which pure silicon should be doped to make p-type semiconductor are those of .
When an element of fifth group is doped in pure germanium/silicon due to excess of an electron, the semiconductor is known as n-type semiconductor. In n-type semiconductor, majority of carrier is electron. If the element of third group is added, the semiconductor is known as p-type. In this case, majority of carriers is hole.
The correct answer is: boron and aluminium
What is the maximum electric field when Vbi = 2V, VR = 5V and width of the semiconductor is 7cm?
Emax = -2(Vbi + VR) / W
= -2(2 + 5) / (7 * 10-2)
The fermi level of an intrinsic semi-conductor is pinned at the centre of the band-gap. The probability of occupation of the highest electronic state in valence band at room temperature, will b e :
According to Fermi-Dirac distribution law, the probability of an electron in finding energy level E at temperature T is given as
By (i) and (ii),
The correct answer is: half
The depletion layers in a p-n junction diode consists of layers of :
The depletion layer in p-n junction consists of the layer of positively charged donors on the n-side and negatively charged acceptors on p-side.
The correct answer is: Positively charged donors on the n-side and negatively charged acceptors on the p-side
pure silicon at 300K has equal electrons concentrations (ne) and hole concentration (nh) of 1.5 x 1016 m-3 . Doping by sodium increases nh to 4.5 x 1022 m-3 . Then ne in the doped silicon is :
Under thermal equilibrium, the product of free electron concentration n and hole 9 e concentration nh is constant equal to where ni is the concentration of intrinsic semiconductor
The correct answer is: