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Which of the following can be considered to be an advantage of FET amplifier as compared to BJT amplifier?
A – Higher input impedance
B – Good bias stability
C – Higher gain-bandwidth product
D – Lower noise figure
Select the correct answer using the codes given below
Codes:
Advantage of FET over BJT are
i) Higher input impedance
ii) Good bias stability
iii) Lower noise figure.
The pinch off voltage of JFET is 5v. What is its cut off voltage?
Pinch off voltage = 5V
At cut off the gate to source voltage of JFET is equal to pinch off voltage
Vgs = VP
⇒ Vgs(off) = 5V.
Which of the following is the main advantage of Self bias?
Self bias eliminates the need of 2 power supply by connecting gate resistance to the supply voltage.
Which of the following is the necessary condition to design an amplifier?
In order to design an amplifier the time constant and RC and voltage across specified terminals.
Which of the following is the equation for stray capacitance frequency?
During high frequency the capacitance is due to combination of transmission capacitance and junction capacitance. The equation is given by FH = 1/27R.
Two identical FETs, each characterized by the parameters g_m and r_d are connected in parallel .The composite FET is then characterized by the parameters_____________
By converting FET into ac equivalent circuits and connecting them in parallel,
gn = 2gm and rn = rd/2.
The action of JFET in its equivalent circuit can be represented as which of the following?
In JFET equivalent circuit, the output current is controlled by the gate to source voltage and hence we can say it is a Voltage controlled current source.
At higher frequency, the capacitance of an amplifier circuit is mainly because of which capacitance?
During High frequency, the stray capacitance is the only source of capacitance in an amplifier circuit, the stray capacitance and junction capacitance.
What is the maximum value of gain of an amplifier?
The maximum gain of amplifier is 1000000.
When we consider this in decibel scale,
it gives 120dB
⇒ gain in dB = 20log10(100000)
= 120dB.
Concept:
1. Junction field effect transistor (JFET)
2. Metal oxide semiconductor field effect transistor (MOSFET)
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