The noise figure of FET circuit is
The circuit diagram shown in the figure consists of transistors in;
The encapsulation of transistor is necessary for
The circuit of figure is called
In CE approximately, the active region is where the collector curves are
In a transistor leakage current mainly depends on
In a CB amplifier the maximum efficiency could be
Assertion (A): As per Miller theorem a capacitance C from input to output appears as a much larger capacitance across input terminals
Reason (R): In a lag network the output voltage appears across capacitor
When a transistor is connected in common emitter mode, it with have
In the equivalent circuit of figure voltage gain is
The signal input to a given amplifier is made up of 100 mΩ signal power and 1 mΩ noise power. The amplifier contributes an additional 100 mΩ of noise and has a power gain of 20 dB. The input signal-to noise ratio is
Assertion (A): A good op-amp should have very large band width
Reason (R): An ideal op-amp should have infinite input resistance and zero output resistance
In all base driver amplifiers
The horizontal intercept of dc load line is the same as ideal
Figure represents a
In deriving ac equivalent circuit for an amplifier circuit we short circuit
Which of the following statements is false?
Which of the following amplifier circuit using junction transistor has the best gain?
In an op-amp differentiator
In switching devices, gold doping is used to
In a BJT amplifier circuit the size of coupling capacitor depends on
In a closed loop non-inverting amplifier, constructed using single break-frequency op-amp, bandwidth with feedback can be written as. (f0 - break frequency, β - gain of the feedback circuit, A - open loop voltage gain, Af - closed loop voltage gain)
A silicon sample A is doped with 1018 Atoms/cm3 of Boron. Another sample B of identical dimensions is doped with 1018 atoms/cm3 of phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is
Which of the following circuit has the greatest bandwidth?
A FET is a __________ controlled device whereas a bipolar transistor is a __________ controlled device.