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Test: BJT Circuits At DC


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10 Questions MCQ Test Analog Electronics | Test: BJT Circuits At DC

Test: BJT Circuits At DC for Electrical Engineering (EE) 2023 is part of Analog Electronics preparation. The Test: BJT Circuits At DC questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: BJT Circuits At DC MCQs are made for Electrical Engineering (EE) 2023 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: BJT Circuits At DC below.
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Test: BJT Circuits At DC - Question 1

Which of the following condition is true for cut-off mode?

Detailed Solution for Test: BJT Circuits At DC - Question 1

The base current as well as the collector current are zero in cut-off mode.

Test: BJT Circuits At DC - Question 2

 Which of the following is true for the cut-off region in an npn transistor?

Detailed Solution for Test: BJT Circuits At DC - Question 2

Both collector and emitter current are zero in cut-off region.

Test: BJT Circuits At DC - Question 3

Which of the following is true for a typical active region of an npn transistor?

Detailed Solution for Test: BJT Circuits At DC - Question 3

Most commonly used transistors have Vce less than 0.4 V for the active region.

Test: BJT Circuits At DC - Question 4

 Which of the following is true for the active region of an npn transistor?

Detailed Solution for Test: BJT Circuits At DC - Question 4

 The base current and the collector current are directly proportional to each other and the potential difference between the collector and the base is always less than 0.4 V.

Test: BJT Circuits At DC - Question 5

Which of the following is true for the saturation region of BJT transistor?

Detailed Solution for Test: BJT Circuits At DC - Question 5

The collector current is directly proportional to the base current in the saturation region of the BJT.

Test: BJT Circuits At DC - Question 6

Which of the following is true for a npn transistor in the saturation region?

Detailed Solution for Test: BJT Circuits At DC - Question 6

 The commonly used npn transistors have a potential difference of around 0.5V between he collector and the base.

Test: BJT Circuits At DC - Question 7

The potential difference between the base and the collector Vcb in a pnp transistor in saturation region is ________

Detailed Solution for Test: BJT Circuits At DC - Question 7

The value of Vcb is -0.5V for a pnp transistor and 0.5V for an npn transistor.

Test: BJT Circuits At DC - Question 8

For a pnp transistor in the active region the value of Vce (potential difference between the collector and the base) is

Detailed Solution for Test: BJT Circuits At DC - Question 8

For a pnp transistor Vce is less than 0.3V, for an npn transistor it is greater than 0.3V.

Test: BJT Circuits At DC - Question 9

Which of the following is true for a pnp transistor in active region?

Detailed Solution for Test: BJT Circuits At DC - Question 9

Whether the transistor in npn or pnp, for it be in active region the EB junction must be reversed bias the CB junction must be forward bias.

Test: BJT Circuits At DC - Question 10

Which of the following is true for a pnp transistor in saturation region?

Detailed Solution for Test: BJT Circuits At DC - Question 10

Whether the transistor in npn or pnp, for it be in saturation region the EB junction must be forward bias the CB junction must be forward bias.

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