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Electrical Engineering (EE)  >  Analog Electronics  >  Test: Band Structure of an Open-Circuited PN Junction Download as PDF

Test: Band Structure of an Open-Circuited PN Junction


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10 Questions MCQ Test Analog Electronics | Test: Band Structure of an Open-Circuited PN Junction

Test: Band Structure of an Open-Circuited PN Junction for Electrical Engineering (EE) 2023 is part of Analog Electronics preparation. The Test: Band Structure of an Open-Circuited PN Junction questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: Band Structure of an Open-Circuited PN Junction MCQs are made for Electrical Engineering (EE) 2023 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Band Structure of an Open-Circuited PN Junction below.
Solutions of Test: Band Structure of an Open-Circuited PN Junction questions in English are available as part of our Analog Electronics for Electrical Engineering (EE) & Test: Band Structure of an Open-Circuited PN Junction solutions in Hindi for Analog Electronics course. Download more important topics, notes, lectures and mock test series for Electrical Engineering (EE) Exam by signing up for free. Attempt Test: Band Structure of an Open-Circuited PN Junction | 10 questions in 10 minutes | Mock test for Electrical Engineering (EE) preparation | Free important questions MCQ to study Analog Electronics for Electrical Engineering (EE) Exam | Download free PDF with solutions
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Test: Band Structure of an Open-Circuited PN Junction - Question 1
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The conduction band edge in the p material is not at the same level to that of conduction band edge in the n material. Is it true or false?

Detailed Solution for Test: Band Structure of an Open-Circuited PN Junction - Question 1

In a p-n junction diode, the energy levels of the p material and n material will not be at same level. They will be different. So, the conduction band edge as well as the valence band edge of the p material will not be same to that of the n material.

Test: Band Structure of an Open-Circuited PN Junction - Question 2
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Which of the following equations represent the correct expression for the shift in the energy levels for the p-n junction?

Detailed Solution for Test: Band Structure of an Open-Circuited PN Junction - Question 2

The shift in the energy of the energy level will be the difference of the conduction band edge of the p material and conduction band edge of n material. In the energy level diagram, the conduction band edge of p material is higher than that of the n material.

Test: Band Structure of an Open-Circuited PN Junction - Question 3
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 Calculate the Eo given that Nd=1.5*1010cm-3, Na=1.5*1010cm-3 at temperature 300K?

Detailed Solution for Test: Band Structure of an Open-Circuited PN Junction - Question 3

 Eo=kTln((Nd*Na)/(ni)2)
Substituting k=1.38*10-23/K, T=300k and the values ofNd,Naand ni,
We get
Eo=0eV.

Test: Band Structure of an Open-Circuited PN Junction - Question 4
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 In a p-n junction, the valence band edge of the p material is greater than which of the following band?
Detailed Solution for Test: Band Structure of an Open-Circuited PN Junction - Question 4

When the p-n junction is formed, the energy levels of the p- material go higher than the n material. That’s why the valence band of the p material will be greater than that of the n material.

Test: Band Structure of an Open-Circuited PN Junction - Question 5
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Which of the following equations represent the correct expression for the band diagram of the p-n junction? (E1=difference between the fermi level of material and conduction band of n material and E2=difference between the conduction band of n material and fermi level of n material)
Detailed Solution for Test: Band Structure of an Open-Circuited PN Junction - Question 5

From the energy band diagram of the p-n junction, the option ‘a’ satisfies that band diagram.

Test: Band Structure of an Open-Circuited PN Junction - Question 6
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Calculate the value of Eo when pno=104cm-3 and ppo=1016cm-3 at T=300K.
Detailed Solution for Test: Band Structure of an Open-Circuited PN Junction - Question 6

Eo=kTln(ppo/pno)
Substituting the values, we get
Eo=0.7eV.

Test: Band Structure of an Open-Circuited PN Junction - Question 7
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Calculate the value of Dp when µp=400cm/s and VT=25mV.
Detailed Solution for Test: Band Structure of an Open-Circuited PN Junction - Question 7

Dp= µp*VT
=400*10-2*25*10-3
=0.1.

Test: Band Structure of an Open-Circuited PN Junction - Question 8
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 What is the value of kT at room temperature?
Detailed Solution for Test: Band Structure of an Open-Circuited PN Junction - Question 8

 kT=1.38*10-23*300K
=4.14*10-21/ (1.6*10-19)
=0.0256eV.

Test: Band Structure of an Open-Circuited PN Junction - Question 9
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 Is Vo depends only on the equilibrium concentrations. Is it true or false?
Detailed Solution for Test: Band Structure of an Open-Circuited PN Junction - Question 9

Vo is the contact potential of the junction when the junction is in equilibrium. If, the junction is not in the equilibrium, Vo can’t be calculated.

Test: Band Structure of an Open-Circuited PN Junction - Question 10
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Calculate Vo when ppo=1016cm-3, pno=104cm-3 and Vt=25mV.
Detailed Solution for Test: Band Structure of an Open-Circuited PN Junction - Question 10

 Vo=VT ln⁡(ppo/pno )
=25*10-3*ln(1016/104)
=0.69V.

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