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Test: Basic MOS Transistors


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30 Questions MCQ Test | Test: Basic MOS Transistors

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Test: Basic MOS Transistors - Question 1

 Electronics are characterized by

Detailed Solution for Test: Basic MOS Transistors - Question 1

 Electronics are characterized by reliability, low power dissipation, extremely low weight and volume, low cost, can cope up with high degree of sophistication and complexity.

Test: Basic MOS Transistors - Question 2

 Speed power product is measured as the product of

Test: Basic MOS Transistors - Question 3

 nMOS devices are formed in

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nMOS devices are formed in a p-type substrate of moderate doping level. nMOS devices have higher mobility and is cheaper.

Test: Basic MOS Transistors - Question 4

 Source and drain in nMOS device are isolated by

Detailed Solution for Test: Basic MOS Transistors - Question 4

The source and drain regions are formed by diffusing n-type impurity, it gives rise to depletion region which extend in more lightly doped p-region. Thus Source and drain in a nMOS device are isolated by two diodes.

Test: Basic MOS Transistors - Question 5

In depletion mode, source and drain are connected by

Detailed Solution for Test: Basic MOS Transistors - Question 5

 In depletion mode, source and drain are connected by conducting channel but the channel can be closed by applying suitable negative voltage to the gate.

Test: Basic MOS Transistors - Question 6

 The condition for non saturated region is

Detailed Solution for Test: Basic MOS Transistors - Question 6

The condition for non saturated region is Vds lesser Vgs – Vt. In non saturation region MOSFET acts as voltage source. Varying Vds will provide significant change in drain current.

Test: Basic MOS Transistors - Question 7

In enhancement mode, device is in _________ condition

Detailed Solution for Test: Basic MOS Transistors - Question 7

 In enhancement mode, the decive is in non conducting condition. For n-type FET, thershold voltage is positive and p-type threshold voltage is negative.

Test: Basic MOS Transistors - Question 8

The condition for non conducting mode is

Detailed Solution for Test: Basic MOS Transistors - Question 8

 In enhancement mode the device is in non conducting mode, and its condition is Vds = Vgs = Vs = 0.

Test: Basic MOS Transistors - Question 9

 nMOS is

Detailed Solution for Test: Basic MOS Transistors - Question 9

 nMOS transistors are acceptor doped. Acceptor is a dopant which when added forms p-type region. Some of the accpetors are silicon, boron, aluminium etc.

Test: Basic MOS Transistors - Question 10

 MOS transistor structure is

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 MOS transistor structure is completely symmetrical with respect to source and drain.

Test: Basic MOS Transistors - Question 11

 pMOS is

Detailed Solution for Test: Basic MOS Transistors - Question 11

nMOS is acceptor doped and pMOS is donor doped devices. Acceptor doped forms p-type region and donor doped forms n-type region.

Test: Basic MOS Transistors - Question 12

 Inversion layer in enhancement mode consists of excess of

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Inversion layer in enhancement mode consists of excess of negative carriers that is electron.

Test: Basic MOS Transistors - Question 13

The condition for linear region is

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The condition for linear region is Vgs > Vt. The power of MOS in linear region is less. It is a power dissipating region.

Test: Basic MOS Transistors - Question 14

As source drain voltage increases, channel depth

Detailed Solution for Test: Basic MOS Transistors - Question 14

As source drain voltage Vds increases, the channel depth at the drain end decreases.

Test: Basic MOS Transistors - Question 15

MOS transistors consists of

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MOS transistors is formed as a sandwich consisting of a semiconductor layer, a silicon-di-oxide layer and a metal layer.

Test: Basic MOS Transistors - Question 16

MOS transistors consists of

Detailed Solution for Test: Basic MOS Transistors - Question 16

MOS transistors is formed as a sandwich consisting of a semiconductor layer, a silicon-di-oxide layer and a metal layer.

Test: Basic MOS Transistors - Question 17

In MOS transistors, _____ is used for their gate

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In MOS transistors, polycrystalline silicon is used for their gate region instead of metal. Polysilicon gates have replaced all other older devices.

Test: Basic MOS Transistors - Question 18

The gate region consists of

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The gate region is a sandwich consisting of semiconductor layer, an insulating layer and an upper metal layer.

Test: Basic MOS Transistors - Question 19

Electrical charge flows from

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Electrical charge or current flows from source to drain depending on the charge applied to the gate region.

Test: Basic MOS Transistors - Question 20

Source in MOS transistors is doped with ______ material

Detailed Solution for Test: Basic MOS Transistors - Question 20

 Source and drain in the MOS transistors are doped with N-type material and substrate is doped with p-type material.

Test: Basic MOS Transistors - Question 21

 In N channel MOSFET which is the more negative of the elements?

Detailed Solution for Test: Basic MOS Transistors - Question 21

 In N channel MOSFET, source is the more negative of the elements and in the case of P channel MOSFET, it is the more positive of the elements.

Test: Basic MOS Transistors - Question 22

If the gate is given sufficiently large charge, electrons will be attracted to

Detailed Solution for Test: Basic MOS Transistors - Question 22

If the gate is given sufficiently large charge, the negative charge carreirs, electrons will be attracted from the bulk of the substrate material into the channel region below the oxide.

Test: Basic MOS Transistors - Question 23

 Enhancement mode device acts as ____ switch, depletion mode acts as _____ switch

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 Enhancement mode transistor acts as open switch whereas depletion mode transistor acts as normally closed switch.

Test: Basic MOS Transistors - Question 24

Depletion mode MOSFETs are more commonly used as

Detailed Solution for Test: Basic MOS Transistors - Question 24

 Depletion mode MOSFETs are more commonly used as resistors than as switches. As permanently on switch it has high resistance.

Test: Basic MOS Transistors - Question 25

Enhancement mode MOSFETs are more commonly used as

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 Enhancement mode MOSFETs are more commonly used as switches and depletion mode devices are more used as resistors.

Test: Basic MOS Transistors - Question 26

Depletion mode transistor should be large.

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Depletion mode transistors should be made large that is long and thin to create the large ‘on’ resistance.

Test: Basic MOS Transistors - Question 27

Which expression is true?

Detailed Solution for Test: Basic MOS Transistors - Question 27

When driving a capacitive output load, charging time will be long compared to the discharging time.

Test: Basic MOS Transistors - Question 28

Overheating in device occurs due to less number of resistors per unit area.

Detailed Solution for Test: Basic MOS Transistors - Question 28

 When the number of resistors per unit area increases, the device may not dissipate heat very well. This results in device overheating which leads to its failure.

Test: Basic MOS Transistors - Question 29

In n channel MOSFET, _____ is constant

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In all n channel MOSFET transistors, channel length is constant where as channel width can be varied.

Test: Basic MOS Transistors - Question 30

VLSI technology uses ________ to form integrated circuit

Detailed Solution for Test: Basic MOS Transistors - Question 30

Very-large scale integration is the process of creating integrated circuit with thousands of transistors into one single chip.

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