One electron volt equals
An excited electron is an atom returns to the ground state
For photo - Excitation to take place, the energy of the incident photon must
Where w is the energy difference between the two stationary states.
For forming p type germenium, the impurity atom must have valency of
For forming n - type germenium the impurity atom has valency of
In n- type semiconductor, new discrete energy levels get created
For an n-type semiconductor, there are more electrons in the conduction band than there are holes in the valence band. This also implies that the probability of finding an electron near the conduction band edge is larger than the probability of finding a hole at the valence band edge. Therefore, the Fermi level is closer to the conduction band in an n-type semiconductor and it lies just below the conduction band.
In p - type germanium, new discrete levels get created
When a donor atom is added to a semiconductor, the donor atom
Drift current in germanium is caused by
Acceptor impurity atom in germanium results in
In germanium at room temperature, the forbidden energy gap EG is about
In silicon at room temperature, the forbidden energy gap EG is about
Heavy doping of a semiconductor corresponds to impurity concentration of 1 part in
In any conductor, the hall voltage VH is proportional to
Where B is the existing magnetic field
At 0 deg K the percentage of quantum state occupied upto Fermi level is
In an n-type semiconductor, as temperature T increases, the Fermi level EF
A semiconductor has ………… temperature coefficient of resistance.
Intrinsic semiconductor material is characterized by a valence shell of how many electrons?
In a p - type semiconductor, as the acceptor concentration NA is increased, the Fermi level
In extrinsic semiconductor, conductivity varies with respect to temperature.
Extrinsic semiconductor is a
As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor …
Which of following is not a trivalent impurity atom?
With the use of hall effect we can determine
Of a given specimen, hall voltage is negative the semiconductor will be