# Test: Basic Of Semiconductor

## 25 Questions MCQ Test Basic Electronics Engineering for SSC JE (Technical) | Test: Basic Of Semiconductor

Description
This mock test of Test: Basic Of Semiconductor for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 25 Multiple Choice Questions for Electrical Engineering (EE) Test: Basic Of Semiconductor (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: Basic Of Semiconductor quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: Basic Of Semiconductor exercise for a better result in the exam. You can find other Test: Basic Of Semiconductor extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
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QUESTION: 2

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QUESTION: 3

### For photo - Excitation to take place, the energy of the incident photon must Where w is the energy difference between the two stationary states.

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QUESTION: 4

For forming p type germenium, the impurity atom must have valency of

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QUESTION: 5

For forming n - type germenium the impurity atom has valency of

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QUESTION: 6

In n- type semiconductor, new discrete energy levels get created

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For an n-type semiconductor, there are more electrons in the conduction band than there are holes in the valence band. This also implies that the probability of finding an electron near the conduction band edge is larger than the probability of finding a hole at the valence band edge. Therefore, the Fermi level is closer to the conduction band in an n-type semiconductor and it lies just below the conduction band.

QUESTION: 7

In p - type germanium, new discrete levels get created

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QUESTION: 8

When a donor atom is added to a semiconductor, the donor atom

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QUESTION: 9

Drift current in germanium is caused by

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QUESTION: 10

Acceptor impurity atom in germanium results in

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QUESTION: 11

In germanium at room temperature, the forbidden energy gap EG is about

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QUESTION: 12

In silicon at room temperature, the forbidden energy gap EG is about

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QUESTION: 13

Heavy doping of a semiconductor corresponds to impurity concentration of 1 part in

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QUESTION: 14

In any conductor, the hall voltage VH is proportional to

Where B is the existing magnetic field

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QUESTION: 15

At 0 deg K the percentage of quantum state occupied upto Fermi level is

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QUESTION: 16

In an n-type semiconductor, as temperature T increases, the Fermi level EF

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QUESTION: 17

A semiconductor has ………… temperature coefficient of resistance.

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QUESTION: 18

Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

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QUESTION: 19

In a p - type semiconductor, as the acceptor concentration NA is increased, the Fermi level

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QUESTION: 20

In extrinsic semiconductor, conductivity varies with respect to temperature.

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QUESTION: 21

Extrinsic semiconductor is a

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QUESTION: 22

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor …

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QUESTION: 23

Which of following is not a trivalent impurity atom?

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QUESTION: 24

With the use of hall effect we can determine

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QUESTION: 25

Of a given specimen, hall voltage is negative the semiconductor will be

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