The BiCMOS are preferred over CMOS due to:
These are the 3 advantages of BiCMOS over CMOS.
The transistors used in BiCMOS are:
BiCMOS is a combination of both MOSFET and BJT.
The high current driving capability of the BiCMOS is due to:
BJT has the high current driving capability.
In BiCMOS inverter, the BJT used are:
npn BJTs are used in BiCMOS inverter.
The drawback of the BiCMOS circuits are:
The other 2 are the merits of BiCMOS, Increased fabrication Complexity is a demerit of BiCMOS circuits.
The Bipolar Transistor is fabricated on :
BiCMOS is fabricated on the same substrate of nMOS.
The n-well created for Bipolar Transistor in BiCMOS is used as:
The created nWell is used as Collector region for BiCMOS.
The n-well collector is formed by:
To make the doping concentration less than the emitter.
The collector contact region is doped with higher concentration of n-type impurities due to:
The collector contact region is doped with higher concentration of n-type impurities reduces contact resistance.
The proper BiCMOS inverter circuit is:
In the above diagram of BiCMOS, the labels a,b,c,d denote:
The BJT in BiCMOS works as a:
The Current Ic and Ie are controlled by base emitter bias voltage.
In BiCMOS, the analysis of the operation of BJT is well explained by:
The Ebers Moll equivalent circuit of BJT operating in forward active region is:
The transfer characteristics of BiCMOS inverter is: