# Test: Electronic Devices And Circuits - 5

## 25 Questions MCQ Test Electronic Devices | Test: Electronic Devices And Circuits - 5

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This mock test of Test: Electronic Devices And Circuits - 5 for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 25 Multiple Choice Questions for Electrical Engineering (EE) Test: Electronic Devices And Circuits - 5 (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: Electronic Devices And Circuits - 5 quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: Electronic Devices And Circuits - 5 exercise for a better result in the exam. You can find other Test: Electronic Devices And Circuits - 5 extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
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QUESTION: 2

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QUESTION: 3

### The early effect in a BJT is caused by

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QUESTION: 4

In a common emitter BJT amplifier, the maximum usable supply voltage is limited by

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QUESTION: 5

Assertion (A): In active region of CE output characteristics of BJT, collector current is nearly constant.

Reason (R): Base current in CE connection is very small.

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QUESTION: 6

The temperature of cathode is increased from 2500K to 2600K. The increase in thermionic emission current is about

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QUESTION: 7

Consider the following statement: At finite temperature, magnetic dipoles in a material are randomly oriented giving low magnetization. When magnetic field H is applied, the magnetization?

1. Increases with H
2. Decreases with H
3. Decreases with temp for constant H
Which of the statement given above is/are correct?
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QUESTION: 8

Ferrites have

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QUESTION: 9

Eg is the band gap, A is pre-factor, k is Boltzmann constant? Which one of the following is the remaining grade of paper used in paper capacitor, besides the other two grade of paper-low and extra low loss?

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QUESTION: 10

Barkhausen criterion of oscillation is

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QUESTION: 11

The current through a PN Junction diode with v volts applied to the P region to the N region, where (I0 is the reverse saturation current to the diode, m the ideality factor, k the Boltzmann constant, T the absolute temperature and q the magnitude of charge on an electron) is

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QUESTION: 12

The ratio of diffusion constant for hole DP to the mobility for holes is proportional to

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QUESTION: 13

The carrier mobility in a semiconductor is 0.4 m2/Vs. Its diffusion constant at 300k will be (in m2/s).

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QUESTION: 14

During induction heating of metals which of the following is abnormally high?

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QUESTION: 15

Assertion (A): Alkali metals are used as emitters in phototubes.

Reason (R): Alkali metals have low work functions.

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QUESTION: 16

The output v-i characteristics of enhancement type MOSFET has

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QUESTION: 17

In a full wave rectifier, the current in each of the diodes flows for

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QUESTION: 18

In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C) is such that

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QUESTION: 19

The rating of a transformer to deliver 100 watts of D.C. power to a load under half wave rectifier will be nearly

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QUESTION: 20

When a p-n junction is forward biased, the current remains zero till the applied voltage overcomes the barrier potential.

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QUESTION: 21

Which rectifier has the best ratio of rectification?

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QUESTION: 22

Assertion (A): A p-n junction is used as rectifier.

Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse direction.

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QUESTION: 23

In an integrated circuit the SiO2 layers provide

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QUESTION: 24

For a n-channel JFET with r0 = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V is given by

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QUESTION: 25

Which of the following are voltage controlled devices?

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