Lowest resistivity of the following is
Peak inverse voltage will be highest for
In CE configuration, the output characteristics of a bipolar junction transistor is drawn between
Assertion (A): The reverse current in a p-n junction is nearly constant.
Reason (R): The reverse breakdown voltage of a p-n diode depends on the extent of doping.
An n type semiconductor is illuminated by a steady flux of photons with energy greater than the band gap energy. The change in conductivity Δσ obeys which relation?
[ Here, e is the electron charge, μn electron mobility, μp hole mobility, Δn (Δp) is the excess electron (hole) density ].
Resistivity of metals is expressed in terms of
Figure shows characteristics curves for bipolar transistor. These curves are
Zener diode is invariably used with
The relation between plate current and plate voltage of a vacuum diode is called
Given that the band gap of cadmium sulphide is 2.5 eV, the maximum photon wavelength, for e--hole pair generation will be
The maximum rectification efficiency in case of full wave rectifier is
For a full wave bridge rectifier supplied with 50 Hz a.c., the lowest ripple frequency will be
When an electron rises through a potential of 100 V it will acquired an energy of
Which one of the following gain equations is correct for a MOSFET common-source amplifier?
(gm is mutual conductance, and RD is load resistance at the drain)
If 1 kVA transformer is used for all of the following rectifiers, the d.c. power availability will be least in case of
Which of the following is the ferric electric material?
The amount of time between the creation and disappearance of a hole in an intrinsic semiconductor material is called
In photo electric emission, the threshold frequency f0, work function Uw, and Planck's constant h are related as
In which n type device does p substrate extend upto silicon dioxide layer?
In a N-type semi-conductor, the concentration of minority carriers is mainly depends on
The band gap of Si at room temperature is
Spot the odd one out
Transition capacitance is associated with __________ and depletion capacitance is associated with __________ diodes.
Figure represents a
If the energy gap of a semiconductor is 1.1 eV, then it would be.