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Test: Electronic Devices & Circuits - 5 - Electrical Engineering (EE) MCQ


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25 Questions MCQ Test - Test: Electronic Devices & Circuits - 5

Test: Electronic Devices & Circuits - 5 for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Test: Electronic Devices & Circuits - 5 questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: Electronic Devices & Circuits - 5 MCQs are made for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Electronic Devices & Circuits - 5 below.
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Test: Electronic Devices & Circuits - 5 - Question 1

A JFET operates in ohmic region when

Test: Electronic Devices & Circuits - 5 - Question 2

In CE connection, the leakage current of a transistor is about

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Test: Electronic Devices & Circuits - 5 - Question 3

The early effect in a BJT is caused by

Test: Electronic Devices & Circuits - 5 - Question 4

In a common emitter BJT amplifier, the maximum usable supply voltage is limited by

Test: Electronic Devices & Circuits - 5 - Question 5

Assertion (A): In active region of CE output characteristics of BJT, collector current is nearly constant.

Reason (R): Base current in CE connection is very small.

Test: Electronic Devices & Circuits - 5 - Question 6

The temperature of cathode is increased from 2500K to 2600K. The increase in thermionic emission current is about

Test: Electronic Devices & Circuits - 5 - Question 7

Consider the following statement: At finite temperature, magnetic dipoles in a material are randomly oriented giving low magnetization. When magnetic field H is applied, the magnetization?

  1. Increases with H
  2. Decreases with H
  3. Decreases with temp for constant H
Which of the statement given above is/are correct?
Test: Electronic Devices & Circuits - 5 - Question 8

Ferrites have

Test: Electronic Devices & Circuits - 5 - Question 9

Eg is the band gap, A is pre-factor, k is Boltzmann constant? Which one of the following is the remaining grade of paper used in paper capacitor, besides the other two grade of paper-low and extra low loss?

Test: Electronic Devices & Circuits - 5 - Question 10

Barkhausen criterion of oscillation is

Test: Electronic Devices & Circuits - 5 - Question 11

The current through a PN Junction diode with v volts applied to the P region to the N region, where (I0 is the reverse saturation current to the diode, m the ideality factor, k the Boltzmann constant, T the absolute temperature and q the magnitude of charge on an electron) is

Test: Electronic Devices & Circuits - 5 - Question 12

The ratio of diffusion constant for hole DP to the mobility for holes is proportional to

Test: Electronic Devices & Circuits - 5 - Question 13

The carrier mobility in a semiconductor is 0.4 m2/Vs. Its diffusion constant at 300k will be (in m2/s).

Test: Electronic Devices & Circuits - 5 - Question 14

During induction heating of metals which of the following is abnormally high?

Test: Electronic Devices & Circuits - 5 - Question 15

Assertion (A): Alkali metals are used as emitters in phototubes.

Reason (R): Alkali metals have low work functions.

Test: Electronic Devices & Circuits - 5 - Question 16

The output v-i characteristics of enhancement type MOSFET has

Test: Electronic Devices & Circuits - 5 - Question 17

In a full wave rectifier, the current in each of the diodes flows for

Test: Electronic Devices & Circuits - 5 - Question 18

In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C) is such that

Test: Electronic Devices & Circuits - 5 - Question 19

The rating of a transformer to deliver 100 watts of D.C. power to a load under half wave rectifier will be nearly

Test: Electronic Devices & Circuits - 5 - Question 20

When a p-n junction is forward biased, the current remains zero till the applied voltage overcomes the barrier potential.

Test: Electronic Devices & Circuits - 5 - Question 21

Which rectifier has the best ratio of rectification?

Test: Electronic Devices & Circuits - 5 - Question 22

Assertion (A): A p-n junction is used as rectifier.

Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse direction.

Test: Electronic Devices & Circuits - 5 - Question 23

In an integrated circuit the SiO2 layers provide

Test: Electronic Devices & Circuits - 5 - Question 24

For a n-channel JFET with r0 = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V is given by

Test: Electronic Devices & Circuits - 5 - Question 25

Which of the following are voltage controlled devices?

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