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Test: Electronic Devices & Circuits - 6


25 Questions MCQ Test Analog Electronics | Test: Electronic Devices & Circuits - 6


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Attempt Test: Electronic Devices & Circuits - 6 | 25 questions in 25 minutes | Mock test for Electrical Engineering (EE) preparation | Free important questions MCQ to study Analog Electronics for Electrical Engineering (EE) Exam | Download free PDF with solutions
QUESTION: 1

In P-N junction, the region containing the uncompensated acceptor and donor ions is called

Solution:
QUESTION: 2

In a photodiode the current is due to

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QUESTION: 3

Consider the following statements

  1. Acceptor level lies close the valence band.
  2. Donor level lies close to the valence band.
  3. n type semiconductor behaves as an insulator at 0 K.
  4. p type semiconductor behaves as an insulator at 0 K.
Of these statements:

Solution:
QUESTION: 4

If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then
Solution:
QUESTION: 5

Assertion (A): The conductivity of an n type semiconductor increases with increase in temperature and increase in density of donor atoms.

Reason (R): Diffusion of carriers occurs in semiconductors.

Solution:
QUESTION: 6

No load d.c. output will be least in case of
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QUESTION: 7

When an electron breaks a covalent bond and moves away,
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QUESTION: 8

In which condition does BJT behave like a closed switch?
Solution:
QUESTION: 9

A photo diode is
Solution:
QUESTION: 10

Germanium and Si phosphorus have their maximum spectral response in the
Solution:
QUESTION: 11

No load d.c. output will be least in case of
Solution:
QUESTION: 12

When an electron breaks a covalent bond and moves away,
Solution:
QUESTION: 13

A photo diode is
Solution:
QUESTION: 14

In which condition does BJT behave like a closed switch?
Solution:
QUESTION: 15

Germanium and Si phosphorus have their maximum spectral response in the
Solution:
QUESTION: 16

High purity copper is obtained by
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QUESTION: 17

Photo electric emission can occur only if the frequency of light is more than threshold frequency.
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QUESTION: 18

In a JFET the width of channel is controlled by
Solution:
QUESTION: 19

The unit of thermal resistance of a semi-conductor device is
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QUESTION: 20

Figure represents a
Solution:
QUESTION: 21

For generating 1 MHz frequency signal, the most suitable circuit is
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QUESTION: 22

A doped semi-conductor is called
Solution:
QUESTION: 23

In n type MOSFET, the substrate
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QUESTION: 24

The first and the last critical frequency of an RC driving point impedance function must respectively by
Solution:
QUESTION: 25

The diffusion current is proportional to
Solution:
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