Test: Field Effect Transistors- 2


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15 Questions MCQ Test Topicwise Question Bank for Electrical Engineering | Test: Field Effect Transistors- 2

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Test: Field Effect Transistors- 2 - Question 1

In the saturation region, the JFET transfer characteristics are

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The transfer characteristic, giving the relationship between ID and VGS, can be approximated by the parabola

Test: Field Effect Transistors- 2 - Question 2

The threshold voltage (VT) of a - MOSFET is defined as

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The transfer characteristic of an N - MOSFET indicating VT is shown below.

Test: Field Effect Transistors- 2 - Question 3

In a JFET, the drain current magnitude decreases as the reverse bias across the gate-channel increases because a larger reverse bias causes

Test: Field Effect Transistors- 2 - Question 4

The common source JFET amplifier has

Test: Field Effect Transistors- 2 - Question 5

Assertion (A): In the JFET, the transverse electric field across the reverse biased p-n junction controls the conductivity of the channel.
Reason (R): In enhancement and depletion types of MOSFET, the transverse electric field induced across an insulating layer deposited on the semiconductor material controls the conductivity of the channel.

Test: Field Effect Transistors- 2 - Question 6

Four important parameters of MOSFET and JFET have comparatively larger or smaller values. In comparison to a JFET, a MOSFET will have which one of the following combinations?

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Test: Field Effect Transistors- 2 - Question 7

Match List-I (Device) with List-II (Applications) and select the correct answer using the codes given below the Lists:

Codes:

Detailed Solution for Test: Field Effect Transistors- 2 - Question 7

• Special digital CMOS circuits are available which involve near-zero power dissipation and very low voltage and current requirements. This makes them most suitable for portable systems.
• Since JFET is voltage controlled device, it is used as a voltage variable resistor in operational amplifiers and tone controls.
• Due to zero offset voltage and its symmetrical nature, MOSFET is useful in analog signal switching.
• UJT is used as a relaxation oscillator for generating sawtooth waveforms.

Test: Field Effect Transistors- 2 - Question 8

Consider the following statements:
1. In enhancement n-channel MOSFET an induced n-type channel can be produced between the source and drain if VGS is negative.
2. AFET is more sensitive to variations in input voltage in comparison to an ordinary transistor.
3. AFET is characterized by transconductance.
4 UJT has onli one p-n junction and three leads.

Of these statements which are not correct is/are?

Test: Field Effect Transistors- 2 - Question 9

What are the values of VP and ID for VGS = 0.5 V of an N-channel FET that has IDSS = 10 mA with drain voltage of 5 V and gmo = 5 mA/V?

Detailed Solution for Test: Field Effect Transistors- 2 - Question 9


and, 
= 10 (1 -0.125)2
= 10 x 0.765 = 7.65 mA

Test: Field Effect Transistors- 2 - Question 10

An N-channel JFET has IDss = 1mA and VP = -5 V. The value of its maximum transconductance is

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and 
∴ 

Test: Field Effect Transistors- 2 - Question 11

N-channel FETs are superior to P-channel FETs, because

Detailed Solution for Test: Field Effect Transistors- 2 - Question 11

n-channel FETs are superior to p-chanel FETs because n-channel FETs are faster than p-channel FETs since μn > μP.

Test: Field Effect Transistors- 2 - Question 12

In a FET as VGS is changed from zero to increasing reverse bias, the value of gm

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Test: Field Effect Transistors- 2 - Question 13

A properly biased JFET will act as a

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Due to high input impedance of JFET, it acts as a voltage controlled current source i.e. IG = 0 A.

Test: Field Effect Transistors- 2 - Question 14

A FET is a better chopper than a BJT because it has

Test: Field Effect Transistors- 2 - Question 15

The variation of drain current with gate-to-source voltage (ID- VGS) characteristic of MOSFET is shown in the figure below.
The MOSFET is

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