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Test: MOS Transistor Threshold Voltage


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10 Questions MCQ Test | Test: MOS Transistor Threshold Voltage

Test: MOS Transistor Threshold Voltage for Electrical Engineering (EE) 2023 is part of Electrical Engineering (EE) preparation. The Test: MOS Transistor Threshold Voltage questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: MOS Transistor Threshold Voltage MCQs are made for Electrical Engineering (EE) 2023 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: MOS Transistor Threshold Voltage below.
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Test: MOS Transistor Threshold Voltage - Question 1

The electrical equivalent component for MOS structure is:

Detailed Solution for Test: MOS Transistor Threshold Voltage - Question 1

The MOS structure acts as a capacitor with metal gate and semiconductor acting as parallel plate conductors and oxide as dielectric between them.

Test: MOS Transistor Threshold Voltage - Question 2

The Fermi potential is the function of:

Detailed Solution for Test: MOS Transistor Threshold Voltage - Question 2

The Fermi potential, which is a function of temperature and doping, denotes the difference between the intrinsic Fermi level and the Fermi level.

Test: MOS Transistor Threshold Voltage - Question 3

The direction of electric field when the gate voltage is zero:

Detailed Solution for Test: MOS Transistor Threshold Voltage - Question 3

Metal being more positive compared to semiconductor.. Electric field exists from metal to semiconductor.

Test: MOS Transistor Threshold Voltage - Question 4

Consider a MOS structure with equilibrium Fermi potential of the doped silicon substrate is given as 0.3eV. Electron affinity of Si is 4.15eV and metal is 4.1eV. Find the built in potential of the MOS system:

Detailed Solution for Test: MOS Transistor Threshold Voltage - Question 4

Surface potential: qΦs = 4.15eV+0.55eV+0.3eV=5.0eV
qΦm-qΦs = 4.1eV – 5.0eV =-0.9eV.

Test: MOS Transistor Threshold Voltage - Question 5

When gate voltage is negative for enhancement mode n-MOS, the direction of electric field will be:

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When gate voltage is negative, holes in substrate are attracted towards surface creating electric field from semiconductor to metal.

Test: MOS Transistor Threshold Voltage - Question 6

 At threshold Voltage, the surface potential is:

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When surface potential reaches –fermi potential, the surface inversion occurs. The gate voltage which brings these changes is known as threshold voltage.

Test: MOS Transistor Threshold Voltage - Question 7

Surface inversion occurs when gate voltage is:

Detailed Solution for Test: MOS Transistor Threshold Voltage - Question 7

Surface inversion occurs when gate voltage is equal to threshold voltage.

Test: MOS Transistor Threshold Voltage - Question 8

 The energy band diagram of the MOS system when gate voltage is zero is:

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The energy band diagram of enhancement mode nMOSFET when gate voltage is zero is :

Test: MOS Transistor Threshold Voltage - Question 9

 For enhancement mode n-MOSFET, the threshold voltage is:

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For enhancement mode n-MOSFET, the threshold voltage is positive quantity.

Test: MOS Transistor Threshold Voltage - Question 10

 The threshold voltage depends on:

Detailed Solution for Test: MOS Transistor Threshold Voltage - Question 10

The threshold voltage depends on: The workfunction difference between gate and channel, The gate voltage component to change surface potential, The gate voltage component to offset the depletion charge and fixed charges in gate oxide

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