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Test: Memory Cells - Electrical Engineering (EE) MCQ


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10 Questions MCQ Test - Test: Memory Cells

Test: Memory Cells for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Test: Memory Cells questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: Memory Cells MCQs are made for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Memory Cells below.
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Test: Memory Cells - Question 1

Which method is used to determine structural defects?

Detailed Solution for Test: Memory Cells - Question 1

Deterministic test pattern are used to detect specific faults or structural faults for a circuit under test.

Test: Memory Cells - Question 2

Which is known as stored test pattern method?

Detailed Solution for Test: Memory Cells - Question 2

Deterministic test pattern method is also known as stored test pattern method in the context of BIST applications.

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Test: Memory Cells - Question 3

Which method uses finite state machine for developing the test pattern?

Detailed Solution for Test: Memory Cells - Question 3

Algorithmic test pattern method uses the hardware finite state machine for generating algorithmic test vectors for the circuit under test.

Test: Memory Cells - Question 4

A n-bit counter produces ______ number of total input combinations

Detailed Solution for Test: Memory Cells - Question 4

A n-bit counter produces totally 2^n number of all possible input combinations for testing the circuit under test and it is called as exhaustive test pattern method.

Test: Memory Cells - Question 5

 Exhaustive test pattern determines

Detailed Solution for Test: Memory Cells - Question 5

Exhaustive test pattern method detects all gate level struck-at fault and also bridging fault.

Test: Memory Cells - Question 6

 Exhaustive test pattern also detects delay faults.

Detailed Solution for Test: Memory Cells - Question 6

Exhaustive test pattern method does not detect all transistor level faults or delay faults since those faults needs specific ordering.

Test: Memory Cells - Question 7

 Which is not suitable for circuits having large N values?

Detailed Solution for Test: Memory Cells - Question 7

 Exhaustive test pattern method is not suitable for circuit having large N values since there is a limit for fault coverage.

Test: Memory Cells - Question 8

 Which method needs fault simulation?

Detailed Solution for Test: Memory Cells - Question 8

 Exhaustive test pattern method needs fault simulation for determining fault coverage where as pseudo-exhaustive test pattern method does not need fault simulation.

Test: Memory Cells - Question 9

 In which method sequences are repeatable?

Detailed Solution for Test: Memory Cells - Question 9

Pseudo-random test pattern method have properties similar to random pattern sequence but the sequence are repeatable.

Test: Memory Cells - Question 10

Which method is used for external functional testing?

Detailed Solution for Test: Memory Cells - Question 10

Random test pattern method is used for external functional testing of microprocessors as well as in ATPG software.

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