Test: Metal Oxide Semiconductor (MOS) Transistor
15 Questions MCQ Test | Test: Metal Oxide Semiconductor (MOS) Transistor
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The conductivity of the pure silicon is raised by :
By introducing Dopants free charge carriers increases further increasing the conductivity of silicon.
The n-type semiconductor have _______ as majority carriers :
In n-type semiconductor the majority charge carriers present are electrons.
The majority carriers of p-type semiconductor are :
The majority charge carriers of n-type semiconductor are holes.
The n-MOS transistor is made up of:
n-MOS Transistor consists of n-type source, n-type drain and p-type bulk.
The correct representation of n-MOSFET is:
This is the correct representation of n-MOSFET :
The correct representation of p-MOSFET is:
This is the correct representation of p-MOSFET:
The oxide layer formed in the MOSFET is :
Silicon Dioxide (Commonly called as glass) is the insulating oxide layer formed in MOSFET.
The Gate to Source voltage acts as input which varies the drain current.
The low voltage on the gate of p-MOSFET forms :
For a p-MOS low gate voltage forms a conducting channel of positive carriers.
The n-MOSFET is working as accumulation mode when:
When the negative voltage is applied to the gate, there develops a presence of negative charge on the gate. The mobile positively charged holes are attracted to the region beneath the gate. This explains the formation of accumulation mode.
The current through the n-MOS transistor will flow when:
The current flows through the n-MOS transistor when Vgs>Vtreshold, Vds>0.
The p-MOS Transistor is said to be in Saturation mode when:
The pMOS transistor is in Saturation mode when Vdsp < Vgsp – Vtp and Vgsp < Vtp.
The p-MOS Transistor is said to be in Saturation mode when:
The pMOS transistor is in Saturation mode when Vdsp < Vgsp – Vtp and Vgsp < Vtp.
The Fermi potential of the p-type MOSFET is :
The Fermi potential of the p-type semiconductor is φfp = (kT/q)ln(ni/NA) where ni denotes the intrinsic carrier concentration of silicon, NA is acceptor concentration, ND is Donor Concentration.
The principle of the MOSFET operation is:
By varying the gate voltage the current between the source and drain are varied.
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