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Test: Parameters Of MOS Transistors


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10 Questions MCQ Test | Test: Parameters Of MOS Transistors

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Test: Parameters Of MOS Transistors - Question 1

The work function difference is neagative for

Detailed Solution for Test: Parameters Of MOS Transistors - Question 1

The work function difference between gate and Si (Φms) is negative for silicon substrate and polysilicon gate.

Test: Parameters Of MOS Transistors - Question 2

Substrate bias voltage is positive for nMOS.

Detailed Solution for Test: Parameters Of MOS Transistors - Question 2

Substrate bias voltage Vsb is positive for pMOS and negative for nMOS.

Test: Parameters Of MOS Transistors - Question 3

 According to body effect, substrate is biased with respect to

Detailed Solution for Test: Parameters Of MOS Transistors - Question 3

According to body effect, substrate is biased with respect to the source. Body effect can be seen as a change in the threshold voltage.

Test: Parameters Of MOS Transistors - Question 4

 Increasing Vsb, _______ the threshold voltage

Detailed Solution for Test: Parameters Of MOS Transistors - Question 4

 Increasing the substrate bias voltage Vsb, increases the threshold voltage because it depletes the channel of charge carriers.

Test: Parameters Of MOS Transistors - Question 5

 Transconductance gives the relationship between

Detailed Solution for Test: Parameters Of MOS Transistors - Question 5

Transconductance expresses the relationship between output current Ids and input voltage Vgs.

Test: Parameters Of MOS Transistors - Question 6

Transconductance can be increased by

Detailed Solution for Test: Parameters Of MOS Transistors - Question 6

 Transconductance gm of a MOS device can be increased by increasing its width and it does not depend on length.

Test: Parameters Of MOS Transistors - Question 7

 Increasing the transconductance

Detailed Solution for Test: Parameters Of MOS Transistors - Question 7

Increasing the transconductance gm results in increase in input capacitance and area occupied as it is directly proportional.

Test: Parameters Of MOS Transistors - Question 8

Ids is _______ to length L of the channel

Detailed Solution for Test: Parameters Of MOS Transistors - Question 8

 Ids is inversely proportional to the length L of the channel and using this relationship strong dependence of output conductance on channel length can be demonstrated.

Test: Parameters Of MOS Transistors - Question 9

Switching speed of a MOS device depends on

Detailed Solution for Test: Parameters Of MOS Transistors - Question 9

Switching speed of a MOS device depends on gate voltage above threshold and on carrier mobility and inversely as the square of channel length.

Test: Parameters Of MOS Transistors - Question 10

A fast circuit requires

Detailed Solution for Test: Parameters Of MOS Transistors - Question 10

A fast circuit requires gm as high as possible as the switching speed depends on gate voltage above threshold and on carrier mobility and inversely to square of channel length.

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