Test: Qualitative Theory of The PN Junction - Electrical Engineering (EE) MCQ

The donor atom donates the extra ion to the semiconductor. Therefore, it is represented by the positive plus sign.

The p-type carriers are nominally located to the left of the junction and n-type carriers are to the right.

The flow of carriers in a semiconductor results in the electric field across the junction. The electric field thus makes the current flow in the device.

1 micron=10^-4cm=10^-6cm.

As the electric field is very high, the flow of the carries will be restricted and the equilibrium will be obtained.

The potential barrier is formed at the junction of the semiconductor. It’s necessity of the potential barrier is known as the contact, potential or diffusion.

The net hole current is zero because if this wasn’t true, the hole density at one end of the semiconductor would continue to increase indefinitely with time, a situation which is obviously physically impossible.

The un-neutralised ions in the neighbourhood of the junction are known as uncovered ions because they are not mobile.

The junction which is depleted of mobile charges is known as depletion region or space charge region and transition region.

Since, 1 micron=10^-6m
10 micron =10^-5m.