Test: Semiconductor Physics - Electrical Engineering (EE)
20 Questions MCQ Test RRB JE for Electrical Engineering - Test: Semiconductor Physics
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In germanium semiconductor material at T = 400 K the intrinsic concentration is
The intrinsic carrier concentration in silicon is to be no greater than ni = 1x1012 cm-3 . The maximum temperature allowed for the silicon is (Eg = 1.12 eV)
= 9.28 x 10-8, By trial T = 385 KTwo semiconductor material have exactly the same properties except that material A has a bandgap of 1.0eV and material B has a bandgap energy of 1.2 eV. The ratio of intrinsic concentration of material A to that of material B is
In silicon at T = 300 K the thermal-equilibrium concentration of electron is n0 = 5 x 104 cm-3 The hole concentration is
In silicon at T = 300 K if the Fermi energy is 0.22 eV above the valence band energy, the value of p0 is
The thermal-equilibrium concentration of hole p0 in silicon at T = 300 K is 1015 cm-3. The value of n0 is
In germanium semiconductor at T = 300 K, the acceptor concentrations is Na = 1013 cm-3 and donor concentration is Nd = 0. The thermal equilibrium concentration p0 is
A thin film resistor is to be made from a GaAs film doped n - type. The resistor is to have a value of 2 kΩ. The resistor length is to be 200 μm and area is to be 10-6 cm2. The doping efficiency is known to be 90%. The mobility of electrons is 8000 cm2 / V - s . The doping needed is
A silicon sample doped n - type at 1018 cm-3 have a resistance of 10 Ω . The sample has an area of 10-6 cm2 and a length of 10 μm. The doping efficiency of the sample is (μn = 800 cm2/V - s)
Six volts is applied across a 2 cm long semiconductor bar. The average drift velocity is 104 cm/s. The electron mobility is
For a particular semiconductor material following parameters are observed:
These parameters are independent of temperature. The measured conductivity of the intrinsic material is σ = 10-6 (Ω - cm)-1 at T = 300 K. The conductivity at T = 500 K is
An n - type silicon sample has a resistivity of 5 Ω - cm at T = 300 K. The mobility is μn = 1350 cm2 / V - s. The donor impurity concentration is
In a silicon sample the electron concentration drops linearly from 1018 cm-3 to 1016 cm-3 over a length of 2.0 μm. The current density due to the electron diffusion current is Dn = 35cm2/s
In a GaAs sample the electrons are moving under an electric field of 5 kV cm and the carrier concentration is uniform at 1016 cm-3. The electron velocity is the saturated velocity of 107 cm/s. The drift current density is
For a sample of GaAs scattering time is τsc = 10-13s and electron’s effective mass is me* = 0.067 mo. If an electric field of 1 kV cm is applied, the drift velocity produced is
A gallium arsenide semiconductor at T = 300 K is doped with impurity concentration Nd = 1016 cm-3 The mobility μn is 7500 cm2/ V - s . For an applied field of 10 V/cm the drift current density is
In a particular semiconductor the donor impurity concentration is Nd = 1014 cm-3. Assume the following parameters,
An electric field of E = 10 V cm is applied. The electric current density at 300 K is
A semiconductor has following parameter
Q. When conductivity is minimum, the hole concentration is
A semiconductor has following parameter
Q. The minimum conductivity is
A particular intrinsic semiconductor has a resistivity of 50 (Ω - cm) at T = 300 K and 5(Ω - cm) at T = 330 K. If change in mobility with temperature is neglected, the bandgap energy of the semiconductor is
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2 videos|3 docs|77 tests
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2 videos|3 docs|77 tests
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Important Questions for Semiconductor Physics
Semiconductor Physics MCQs with Answers
Online Tests for Semiconductor Physics RRB JE for Electrical Engineering
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