20 Questions MCQ Test RRB JE for Electrical Engineering - Test: Semiconductor Physics
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Two semiconductor material have exactly the same properties except that material A has a bandgap of 1.0eV and material B has a bandgap energy of 1.2 eV. The ratio of intrinsic concentration of material A to that of material B is
Detailed Solution for Test: Semiconductor Physics - Question 3
A thin film resistor is to be made from a GaAs film doped n - type. The resistor is to have a value of 2 kΩ. The resistor length is to be 200 μm and area is to be 10-6 cm2. The doping efficiency is known to be 90%. The mobility of electrons is 8000 cm2 / V - s . The doping needed is
Detailed Solution for Test: Semiconductor Physics - Question 8
In a GaAs sample the electrons are moving under an electric field of 5 kV cm and the carrier concentration is uniform at 1016 cm-3. The electron velocity is the saturated velocity of 107 cm/s. The drift current density is
Detailed Solution for Test: Semiconductor Physics - Question 14
J = evn = (1.6 x 10-19)(107)(1016) = 1.6 x 104 A/cm2
A particular intrinsic semiconductor has a resistivity of 50 (Ω - cm) at T = 300 K and 5(Ω - cm) at T = 330 K. If change in mobility with temperature is neglected, the bandgap energy of the semiconductor is
Detailed Solution for Test: Semiconductor Physics - Question 20
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