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Test: The Body Effect


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10 Questions MCQ Test Analog Electronics | Test: The Body Effect

Test: The Body Effect for Electrical Engineering (EE) 2022 is part of Analog Electronics preparation. The Test: The Body Effect questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: The Body Effect MCQs are made for Electrical Engineering (EE) 2022 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: The Body Effect below.
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Test: The Body Effect - Question 1

The _____________ of a MOSFET is affected by the voltage which is applied to the back contact.

Detailed Solution for Test: The Body Effect - Question 1

The voltage difference between the source and the bulk, VBS changes the width of the depletion layer and therefore also the voltage across the oxide due to the change of the charge in the depletion region. This results in a difference in threshold voltage which equals the difference in charge in the depletion region divided by the oxide capacitance.

Test: The Body Effect - Question 2

The variation of the threshold voltage with the applied bulk-to-source voltage is typically observed by plotting the _________________ as a function of the source-to-drain voltage.

Detailed Solution for Test: The Body Effect - Question 2

The change in threshold current is directly proportional to the square root of the drain current. For further assistance check the mathematical expression for the same.

Test: The Body Effect - Question 3

The SI units of the body effect parameter is

Detailed Solution for Test: The Body Effect - Question 3

 Vt = Vt0 + k[√(Vsb + 2φf) – √2φf]. In this expression k is the body effect parameter hence its units can be determined.

Test: The Body Effect - Question 4

 An NMOS transistor has Vt0 = 0.8 V, 2 φf = 0.7 V, and γ = 0.4 V1/2. Find Vt when VSB = 3 V.

Detailed Solution for Test: The Body Effect - Question 4

Vt = Vt0 + k[√(Vsb + 2φf) – √2φf]. use this expression to obtain the desired result.

Test: The Body Effect - Question 5

The threshold voltage is

Detailed Solution for Test: The Body Effect - Question 5

The threshold voltage depends only on the temperature and it decreases by roughly 2 mV for every degree Celsius increase in the temperature.

Test: The Body Effect - Question 6

As the voltage on the drain is increased, a value is reached at which the pn junction between the drain region and substrate suffers avalanche breakdown known as

Detailed Solution for Test: The Body Effect - Question 6

As the voltage on the drain is increased, a value is reached at which the pn junction between the drain region and substrate suffers avalanche breakdown. This breakdown usually occurs at voltages of 20 V to 150 V and results in a somewhat rapid increase in current (known as a weak avalanche).

Test: The Body Effect - Question 7

A breakdown effect that occurs in modern devices at low voltages (of around 20 V) is

Detailed Solution for Test: The Body Effect - Question 7

 Punch-through occurs in devices with relatively short channels when the drain voltage is increased to the point that the depletion region surrounding the drain region extends through the channel to the source. The drain current then increases rapidly. Normally, punch-through does not result in permanent damage to the device.

Test: The Body Effect - Question 8

At ______________ the drain current is no longer related to the Vgs by square law relationship.

Detailed Solution for Test: The Body Effect - Question 8

At velocity saturation the current depends linearly on the Vgs.

Test: The Body Effect - Question 9

In MOSFETs a breakdown may occur at around 30 V. This is due to

Detailed Solution for Test: The Body Effect - Question 9

The breakdown of the oxide at the gate may occur when the voltage is around 30 V. This may also permanently damage the device.

Test: The Body Effect - Question 10

Which of the below issues may not be experienced when using MOSFETs?

Detailed Solution for Test: The Body Effect - Question 10

All of the mentioned are some of the common issues that one may face while dealing with MOSFETs.

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