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Test: The Temperature Dependence of PN Characteristics - Electrical Engineering (EE) MCQ


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10 Questions MCQ Test - Test: The Temperature Dependence of PN Characteristics

Test: The Temperature Dependence of PN Characteristics for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Test: The Temperature Dependence of PN Characteristics questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: The Temperature Dependence of PN Characteristics MCQs are made for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: The Temperature Dependence of PN Characteristics below.
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Test: The Temperature Dependence of PN Characteristics - Question 1

 The magnitude of the electric charge (e) is given by ____________

Detailed Solution for Test: The Temperature Dependence of PN Characteristics - Question 1

 The charge of the electron is the magnitude of electric force that an electron exerts on other particles which is equal to -1.6*10-19 C, the negative sign indicates the direction of force.

Test: The Temperature Dependence of PN Characteristics - Question 2

What is the forbidden gap voltage for silicon material?

Detailed Solution for Test: The Temperature Dependence of PN Characteristics - Question 2

The forbidden gap voltage of a material is numerically equal to forbidden gap energy of the material which is 1.21 joules for silicon so forbidden gap voltage will be 1.21 V.

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Test: The Temperature Dependence of PN Characteristics - Question 3

 Which of the following parameters of P-N junction diode increases with temperature.

Detailed Solution for Test: The Temperature Dependence of PN Characteristics - Question 3

 Reverse saturation current at temperature T2 is 2[(T2 –T1)/10] times greater than reverse saturation current at temperature T1 where T2 is greater than T1.

Test: The Temperature Dependence of PN Characteristics - Question 4

Which of the following diodes do not exhibits a constant reverse saturation current with the change in reverse saturation voltage.

Detailed Solution for Test: The Temperature Dependence of PN Characteristics - Question 4

1N207 is the germanium diode for which the reverse saturation current is not constant which the change in voltage due to the leakage in the surface of the diode and due to the generation of new current carriers.

Test: The Temperature Dependence of PN Characteristics - Question 5

Which of these P-N junction characteristics are not dependent on temperature.

Detailed Solution for Test: The Temperature Dependence of PN Characteristics - Question 5

 As the temperature of the P-N junction increases the current increases and the voltage decreases so the barrier voltage, reverse saturation current, bias current changes with temperature but junction resistance is independent of temperature.

Test: The Temperature Dependence of PN Characteristics - Question 6

As the temperature to the P-N junction increases the current increases due to?

Detailed Solution for Test: The Temperature Dependence of PN Characteristics - Question 6

As the temperature to the P-N junction increases the mobility of charges increases thus increases the electron-hole pair which proportionally increases the current in the P-N junction diode.

Test: The Temperature Dependence of PN Characteristics - Question 7

 By what percentage the reverse saturation current increases with 10 C rise in the temperature.

Detailed Solution for Test: The Temperature Dependence of PN Characteristics - Question 7

As the temperature to the P-N junction diode increases the mobility of charges increases thus increasing the current, the reverse saturation current increases by 7% with 10C rise in temperature and doubles with every 100C rise in temperature.

Test: The Temperature Dependence of PN Characteristics - Question 8

 What will be the decrease of barrier voltage with the rise in 10C in temperature?

Detailed Solution for Test: The Temperature Dependence of PN Characteristics - Question 8

As the temperature to the P-N junction diode increases the voltage across the junction decreases and the current increases with every degree rise in temperature the barrier voltage increases by 2mV.

Test: The Temperature Dependence of PN Characteristics - Question 9

What will be the reverse saturation current in the junction when the voltage across the junction is 0?

Detailed Solution for Test: The Temperature Dependence of PN Characteristics - Question 9

When the voltage across the junction is zero in the sense there will be potential difference between the junctions hence there will be no movement of electrons and holes, hence the current will be 0.

Test: The Temperature Dependence of PN Characteristics - Question 10

The breakdown voltage of the P-N junction diode decreases due to the increase in.

Detailed Solution for Test: The Temperature Dependence of PN Characteristics - Question 10

Breakdown voltage of the diode is inversely proportional to the reverse leakage current so it decreases with the increase in reverse leakage current.

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