Test: Basic MOS Transistors


30 Questions MCQ Test VLSI System Design | Test: Basic MOS Transistors


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This mock test of Test: Basic MOS Transistors for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 30 Multiple Choice Questions for Electrical Engineering (EE) Test: Basic MOS Transistors (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: Basic MOS Transistors quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: Basic MOS Transistors exercise for a better result in the exam. You can find other Test: Basic MOS Transistors extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

 Electronics are characterized by

Solution:

 Electronics are characterized by reliability, low power dissipation, extremely low weight and volume, low cost, can cope up with high degree of sophistication and complexity.

QUESTION: 2

 Speed power product is measured as the product of

Solution:
QUESTION: 3

 nMOS devices are formed in

Solution:

nMOS devices are formed in a p-type substrate of moderate doping level. nMOS devices have higher mobility and is cheaper.

QUESTION: 4

 Source and drain in nMOS device are isolated by

Solution:

The source and drain regions are formed by diffusing n-type impurity, it gives rise to depletion region which extend in more lightly doped p-region. Thus Source and drain in a nMOS device are isolated by two diodes.

QUESTION: 5

In depletion mode, source and drain are connected by

Solution:

 In depletion mode, source and drain are connected by conducting channel but the channel can be closed by applying suitable negative voltage to the gate.

QUESTION: 6

 The condition for non saturated region is

Solution:

The condition for non saturated region is Vds lesser Vgs – Vt. In non saturation region MOSFET acts as voltage source. Varying Vds will provide significant change in drain current.

QUESTION: 7

In enhancement mode, device is in _________ condition

Solution:

 In enhancement mode, the decive is in non conducting condition. For n-type FET, thershold voltage is positive and p-type threshold voltage is negative.

QUESTION: 8

The condition for non conducting mode is

Solution:

 In enhancement mode the device is in non conducting mode, and its condition is Vds = Vgs = Vs = 0.

QUESTION: 9

 nMOS is

Solution:

 nMOS transistors are acceptor doped. Acceptor is a dopant which when added forms p-type region. Some of the accpetors are silicon, boron, aluminium etc.

QUESTION: 10

 MOS transistor structure is

Solution:

 MOS transistor structure is completely symmetrical with respect to source and drain.

QUESTION: 11

 pMOS is

Solution:

nMOS is acceptor doped and pMOS is donor doped devices. Acceptor doped forms p-type region and donor doped forms n-type region.

QUESTION: 12

 Inversion layer in enhancement mode consists of excess of

Solution:

Inversion layer in enhancement mode consists of excess of negative carriers that is electron.

QUESTION: 13

The condition for linear region is

Solution:

The condition for linear region is Vgs > Vt. The power of MOS in linear region is less. It is a power dissipating region.

QUESTION: 14

As source drain voltage increases, channel depth

Solution:

As source drain voltage Vds increases, the channel depth at the drain end decreases.

QUESTION: 15

MOS transistors consists of

Solution:

MOS transistors is formed as a sandwich consisting of a semiconductor layer, a silicon-di-oxide layer and a metal layer.

QUESTION: 16

MOS transistors consists of

Solution:

MOS transistors is formed as a sandwich consisting of a semiconductor layer, a silicon-di-oxide layer and a metal layer.

QUESTION: 17

In MOS transistors, _____ is used for their gate

Solution:

In MOS transistors, polycrystalline silicon is used for their gate region instead of metal. Polysilicon gates have replaced all other older devices.

QUESTION: 18

The gate region consists of

Solution:

The gate region is a sandwich consisting of semiconductor layer, an insulating layer and an upper metal layer.

QUESTION: 19

Electrical charge flows from

Solution:

Electrical charge or current flows from source to drain depending on the charge applied to the gate region.

QUESTION: 20

Source in MOS transistors is doped with ______ material

Solution:

 Source and drain in the MOS transistors are doped with N-type material and substrate is doped with p-type material.

QUESTION: 21

 In N channel MOSFET which is the more negative of the elements?

Solution:

 In N channel MOSFET, source is the more negative of the elements and in the case of P channel MOSFET, it is the more positive of the elements.

QUESTION: 22

If the gate is given sufficiently large charge, electrons will be attracted to

Solution:

If the gate is given sufficiently large charge, the negative charge carreirs, electrons will be attracted from the bulk of the substrate material into the channel region below the oxide.

QUESTION: 23

 Enhancement mode device acts as ____ switch, depletion mode acts as _____ switch

Solution:

 Enhancement mode transistor acts as open switch whereas depletion mode transistor acts as normally closed switch.

QUESTION: 24

Depletion mode MOSFETs are more commonly used as

Solution:

 Depletion mode MOSFETs are more commonly used as resistors than as switches. As permanently on switch it has high resistance.

QUESTION: 25

Enhancement mode MOSFETs are more commonly used as

Solution:

 Enhancement mode MOSFETs are more commonly used as switches and depletion mode devices are more used as resistors.

QUESTION: 26

Depletion mode transistor should be large.

Solution:

Depletion mode transistors should be made large that is long and thin to create the large ‘on’ resistance.

QUESTION: 27

Which expression is true?

Solution:

When driving a capacitive output load, charging time will be long compared to the discharging time.

QUESTION: 28

Overheating in device occurs due to less number of resistors per unit area.

Solution:

 When the number of resistors per unit area increases, the device may not dissipate heat very well. This results in device overheating which leads to its failure.

QUESTION: 29

In n channel MOSFET, _____ is constant

Solution:

In all n channel MOSFET transistors, channel length is constant where as channel width can be varied.

QUESTION: 30

VLSI technology uses ________ to form integrated circuit

Solution:

Very-large scale integration is the process of creating integrated circuit with thousands of transistors into one single chip.

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