Test: Characteristics Of Npn Bipolar Transistors


10 Questions MCQ Test VLSI System Design | Test: Characteristics Of Npn Bipolar Transistors


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QUESTION: 1

Transconductance of a bipolar is given by

Solution:

Transconductance gm of a bipolar transistor is given by gm = Ic/(kT/q). Transconductance is the electrical characteristic relating the current through the output of a device to the voltage across the input of a device.

QUESTION: 2

Transconductance depends on the process.

Solution:

Transconductance gm is independent of process.

QUESTION: 3

gm is ______ on input voltage Vbe

Solution:

Transconductance gm is exponentially dependent on input voltage Vbe ( base to emitter voltage).

QUESTION: 4

 gm is _______ to Ic

Solution:

 Transconductance gm is directly proportional to Ic, collector current.

QUESTION: 5

Transconductance is a

Solution:

 Transconductance gm is a weak function of transistor size.

QUESTION: 6

gm of bipolar is less than gm of MOS.

Solution:

Transconductance gm of bipolar is greater than gm of MOS if inputs are controlled by equal amounts of charge.

QUESTION: 7

Which of the following is true when inputs are controlled by equal amounts of charge?

Solution:

Cg(MOS) = Cbase(bipolar) when inputs are controlled by equal amounts of charge, and then gm(bipolar) >> gm(MOS).

QUESTION: 8

Which has better I/A ?

Solution:

Current/Area (I/A) of bipolar is five times better than CMOS and this can be calculated using base resistance and base transit time.

QUESTION: 9

Bipolar transistor exhibits _______ delay

Solution:

 Bipolar transistors exhibits tun-on, turn-off, storage delays.

QUESTION: 10

 In bipolar transistor, which is heavily doped?

Solution:

In bipolar transistor, emitter region is heavily doped and base region is lightly doped.