Transconductance of a bipolar is given by
Transconductance gm of a bipolar transistor is given by gm = Ic/(kT/q). Transconductance is the electrical characteristic relating the current through the output of a device to the voltage across the input of a device.
Transconductance depends on the process.
Transconductance gm is independent of process.
gm is ______ on input voltage Vbe
Transconductance gm is exponentially dependent on input voltage Vbe ( base to emitter voltage).
gm is _______ to Ic
Transconductance gm is directly proportional to Ic, collector current.
Transconductance is a
Transconductance gm is a weak function of transistor size.
gm of bipolar is less than gm of MOS.
Transconductance gm of bipolar is greater than gm of MOS if inputs are controlled by equal amounts of charge.
Which of the following is true when inputs are controlled by equal amounts of charge?
Cg(MOS) = Cbase(bipolar) when inputs are controlled by equal amounts of charge, and then gm(bipolar) >> gm(MOS).
Which has better I/A ?
Current/Area (I/A) of bipolar is five times better than CMOS and this can be calculated using base resistance and base transit time.
Bipolar transistor exhibits _______ delay
Bipolar transistors exhibits tun-on, turn-off, storage delays.
In bipolar transistor, which is heavily doped?
In bipolar transistor, emitter region is heavily doped and base region is lightly doped.