Test: Flash Memory


10 Questions MCQ Test VLSI System Design | Test: Flash Memory


Description
This mock test of Test: Flash Memory for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 10 Multiple Choice Questions for Electrical Engineering (EE) Test: Flash Memory (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: Flash Memory quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: Flash Memory exercise for a better result in the exam. You can find other Test: Flash Memory extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

Flash memory is a non-volatile storage device in which data

Solution:

Flash memory is a electronic, solid state, non-volatile memory storage device which can be electrically erased and reprogrammed.

QUESTION: 2

 NOR type flash allows ______ to be read or written independently

Solution:

NOR type flash allows a single machine word that is one byte to be written to an erased location or read independently.

QUESTION: 3

NAND type flash memories are used in

Solution:

NAND type flash memories operates primarily in memory cards, USB flash drives and solid state drivers.

QUESTION: 4

Which is comparatively slower device?

Solution:

Flash memory has fast read access time, but static RAM or ROM are comparatively faster than flash memory.

QUESTION: 5

 Floating gate transistor in flash memory has

Solution:

Floating gate transistor in flash memory has two gates. These two gates are – floating gate and control gate.

QUESTION: 6

 In NOR type flash memory, each cell has one end connected to

Solution:

In NOR type flash memory, each cell has one end connected directly to ground and other end connected to the bit line.

QUESTION: 7

 In NOR type flash memory, data is erased

Solution:

 In NOR type flash memory the data can be erased only blockwise basis. all the cells in an erase segment must be erased together.

QUESTION: 8

The transistors in NAND type flash are connected in

Solution:

The NAND type flash memory also uses floating gate transistors and it is connected to form NAND gate. The transistors are connected in series.

QUESTION: 9

In NAND type flash, memory can be addressed bit-wise.

Solution:

In NAND type flash, memory can be addressed by word, page or even bit wise. In NOR type flash, memory can be addressedby page then word.

QUESTION: 10

The program erase cycle in flash memory is

Solution:

One disadvantage of flash memory is that it has finite number of program-erase cycles. This limits the usage of flash memory.

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