Test: Ids Versus Vds Relationships


14 Questions MCQ Test VLSI System Design | Test: Ids Versus Vds Relationships


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This mock test of Test: Ids Versus Vds Relationships for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 14 Multiple Choice Questions for Electrical Engineering (EE) Test: Ids Versus Vds Relationships (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: Ids Versus Vds Relationships quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: Ids Versus Vds Relationships exercise for a better result in the exam. You can find other Test: Ids Versus Vds Relationships extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

 Ids depends on

Solution:

Ids depends on both Vgs and Vds. The charge induced is dependent on gate to source voltage Vgs also charge can be moved from source to drain under influence of electric field created by Vds.

QUESTION: 2

 Ids can be given by

Solution:

Ids can be given as charge induced in the channel(Qc) divided by transit time (Ʈ). Ids is equivalent to (-Isd).

QUESTION: 3

Transit time can be given by

Solution:

Transit time (Ʈ) can be given by lenght of channel(L) by velocity(v). Transit time is the time required for an electron to travel between two electrodes.

QUESTION: 4

Velocity can be given as

Solution:

Velocity can be given as the product of electron or hole mobility(µ) and electric field(Eds). It gives the flow velocity which an electron attains due to electric field.

QUESTION: 5

 Eds is given by

Solution:

 Electric field(Eds) can be given as the ratio of Vds and L. Eds is the electric field created from drain to source due to volta Vds.

QUESTION: 6

Mobility of proton or hole at room temperature is

Solution:

The value of mobility of proton or hole at room temperature is 240 cm2/V sec. This gives the measure of how fast an electron can move.

QUESTION: 7

In resistive region

Solution:

 In non saturated or resistive region, Vds lesser than Vgs – Vt where Vds is the voltage between drain and source, Vgs is the gate-source voltage and Vt is the threshold voltage.

QUESTION: 8

 The condition for saturation is

Solution:

The condition for saturation is Vds = Vgs – Vt, since at this point IR drop in the channel equals the effective gate to channel voltage at the drain.

QUESTION: 9

Threshold voltage is negative for

Solution:

The threshold voltage for nMOS depletion denoted as Vtd is negative.

QUESTION: 10

The current Ids _______ as Vds increases

Solution:

The current Ids remains fairly constant as Vds increases in the saturation region.

QUESTION: 11

In linear region, ______ channel exists

Solution:

 In linear region of MOSFET, the channel is uniform and narrow. This is the concentration distribution.

QUESTION: 12

When the channel pinches off?

Solution:

In MOSFET, in saturation region, when Vds > (Vgs – Vth), the channel pinches off that is the channel current at the drain spreads out.

QUESTION: 13

When threshold voltage is more, leakage current will be

Solution:

Increasing the threshold voltage, leads to small leakage current when turned off and reduces current flow when turned on.

QUESTION: 14

MOSFET is used as

Solution:

MOSFET is used as current source. Bipolar junction transistor also acts as good current source.

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