Test: Metal Oxide Semiconductor (MOS) Transistor


15 Questions MCQ Test VLSI System Design | Test: Metal Oxide Semiconductor (MOS) Transistor


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QUESTION: 1

The conductivity of the pure silicon is raised by :

Solution:

By introducing Dopants free charge carriers increases further increasing the conductivity of silicon.

QUESTION: 2

The n-type semiconductor have _______ as majority carriers :

Solution:

 In n-type semiconductor the majority charge carriers present are electrons.

QUESTION: 3

The majority carriers of p-type semiconductor are :

Solution:

The majority charge carriers of n-type semiconductor are holes.

QUESTION: 4

The n-MOS transistor is made up of:

Solution:

 n-MOS Transistor consists of n-type source, n-type drain and p-type bulk.

QUESTION: 5

The correct representation of n-MOSFET is:

Solution:

This is the correct representation of n-MOSFET :

QUESTION: 6

The correct representation of p-MOSFET is:

Solution:

This is the correct representation of p-MOSFET:

QUESTION: 7

The oxide layer formed in the MOSFET is :

Solution:

Silicon Dioxide (Commonly called as glass) is the insulating oxide layer formed in MOSFET.

QUESTION: 8

The drain current is varied by:

Solution:

The Gate to Source voltage acts as input which varies the drain current.

QUESTION: 9

The low voltage on the gate of p-MOSFET forms :

Solution:

For a p-MOS low gate voltage forms a conducting channel of positive carriers.

QUESTION: 10

The n-MOSFET is working as accumulation mode when:

Solution:

When the negative voltage is applied to the gate, there develops a presence of negative charge on the gate. The mobile positively charged holes are attracted to the region beneath the gate. This explains the formation of accumulation mode.

QUESTION: 11

The current through the n-MOS transistor will flow when:

Solution:

The current flows through the n-MOS transistor when Vgs>Vtreshold, Vds>0.

QUESTION: 12

The p-MOS Transistor is said to be in Saturation mode when:

Solution:

 The pMOS transistor is in Saturation mode when Vdsp < Vgsp – Vtp and Vgsp < Vtp.

QUESTION: 13

The p-MOS Transistor is said to be in Saturation mode when:

Solution:

The pMOS transistor is in Saturation mode when Vdsp < Vgsp – Vtp and Vgsp < Vtp.

QUESTION: 14

The Fermi potential of the p-type MOSFET is :

Solution:

The Fermi potential of the p-type semiconductor is φfp = (kT/q)ln(ni/NA) where ni denotes the intrinsic carrier concentration of silicon, NA is acceptor concentration, ND is Donor Concentration.

QUESTION: 15

The principle of the MOSFET operation is:

Solution:

 By varying the gate voltage the current between the source and drain are varied.