Test: NMOS And CMOS Fabrication


10 Questions MCQ Test VLSI System Design | Test: NMOS And CMOS Fabrication


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This mock test of Test: NMOS And CMOS Fabrication for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 10 Multiple Choice Questions for Electrical Engineering (EE) Test: NMOS And CMOS Fabrication (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: NMOS And CMOS Fabrication quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: NMOS And CMOS Fabrication exercise for a better result in the exam. You can find other Test: NMOS And CMOS Fabrication extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

Lithography is:

Solution:

Lithography is the process used to develop a pattern to a layer on the chip.

QUESTION: 2

Silicon oxide is patterned on a substrate using:

Solution:

Silicon oxide is patterned on a substrate using Photolithography.

QUESTION: 3

Positive photo resists are used more than negative photo resists because:

Solution:

Negative photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the positive photo resists. Therefore, negative photo resists are-used less commonly in the manufacturing of high-density integrated circuits.

QUESTION: 4

The ______ is used to reduce the resistivity of poly silicon:

Solution:

The resistivity of poly silicon is reduced by Doping impurities.

QUESTION: 5

The isolated active areas are created by technique known as:

Solution:

To create isolated active areas both the techniques can be used. Among them Local Oxidation of Silicon(LOCOS) is most efficient.

QUESTION: 6

The chemical used for shielding the active areas to achieve selective oxide growth is:

Solution:

Selective oxide growth is achieved by shielding the active areas. Silicon nitride (Si3N4) is used for shielding the active areas during oxidation, which effectively inhibits oxide growth.

QUESTION: 7

The dopants are introduced in the active areas of silicon by:

Solution:

Two ways to add dopants are diffusion and ion implantation.

QUESTION: 8

To grow the polysilicon gate layer, the chemical used for chemical vapour deposition is:

Solution:

Silicon Wafer is placed in a reactor with silane gas (SiH4), and they are heated again to grow the polysilicon layer by chemical vapor deposition.

QUESTION: 9

The process by which Aluminium is grown over the entire wafer , also filling the contact cuts is:

Solution:

Aluminum is sputtered over the entire wafer, it also fills the contact cuts

QUESTION: 10

Chemical Mechanical Polisihing is used to:

Solution:

The pad oxide and nitride are removed using a Chemical Mechanical Polishing (CMP) step.

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