Test: NMOS & CMOS Fabrication


20 Questions MCQ Test VLSI System Design | Test: NMOS & CMOS Fabrication


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This mock test of Test: NMOS & CMOS Fabrication for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 20 Multiple Choice Questions for Electrical Engineering (EE) Test: NMOS & CMOS Fabrication (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: NMOS & CMOS Fabrication quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: NMOS & CMOS Fabrication exercise for a better result in the exam. You can find other Test: NMOS & CMOS Fabrication extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

 nMOS fabrication process is carried out in

Solution:

 nMOS fabrication process is carried out in thin wafer of a single crystal with high purity.

QUESTION: 2

_____ impurities are added to the wafer of the crystal

Solution:

p impurities are introduced as the crystal is grown. This increases the hole concentration in the device.

QUESTION: 3

 What kind of substrate is provided above the barrier to dopants?

Solution:

Above a layer of silicon dioxide which acts as barrier, insulating layer is provided upon which other layers may be deposited and patterned.

QUESTION: 4

The photoresist layer is exposed to

Solution:

The photoresist layer is exposed to ultraviolet light to mark the regions where diffusion is to take place.

QUESTION: 5

In nMOS device, gate material could be

Solution:

In nMOS device, the gate material could be metal or polysilicon. This polysilicon layer has heavily doped polysilicon deposited by CVD.

QUESTION: 6

The commonly used bulk substrate in nMOS fabrication is

Solution:

In nMOS fabrication, the bulk substrate used can be either bulk silicon or silicon-on-sapphire.

QUESTION: 7

 In nMOS fabrication, etching is done using

Solution:

In nMOS fabrication, etching is done using hydroflouric acid or plasma. Etching is a process used to remove layers from the surface.

QUESTION: 8

Heavily doped polysilicon is deposited using

Solution:

The polysilicon layer consists of heavily doped polysilicon deposited by chemical vapour deposition.

QUESTION: 9

 In diffusion process, ______ impurity is desired

Solution:

 Diffusion is carried out by heating the wafer to high temperature and passing a gas containing the desired ntype impurity.

QUESTION: 10

Contact cuts are made in

Solution:

Contact cuts are made in the desired polysilicon area, source and gate. COntact cuts are those places where connection has to be made.

QUESTION: 11

Interconnection pattern is made on

Solution:

The metal layer is masked and etched to form interconnection pattern. The metal layer was formed using aluminium deposited over the formed surface.

QUESTION: 12

 _______ is used to suppress unwanted conduction

Solution:

Boron is used to suppress the unwanted conduction between transistor sites. It is implanted in the exposed regions.

QUESTION: 13

 CMOS technology is used in developing

Solution:

CMOS technology is used in developing microcontrollers, microprocessors, digital logic circuits and other integrated circuits.

QUESTION: 14

 CMOS has

Solution:

Some of the properties of CMOS are that it has low power dissipation, high packing density and low noise margin.

QUESTION: 15

 In CMOS fabrication, nMOS and pMOS are integrated in same substrate.

Solution:

In CMOS fabrication, nMOS and pMOS are integrated in the same chip substrate. n-type and p-type devices are formed in the same structure.

QUESTION: 16

P-well is created on

Solution:

P-well is created on n substrate to accommodate n-type devices whereas p-type devices are formed in the ntype substrate.

QUESTION: 17

 Oxidation process is carried out using

Solution:

 Oxidation process is carried out using high purity oxygen and hydrogen. Oxidation is a process of oxidizing or being oxidised.

QUESTION: 18

 Photoresist layer is formed using

Solution:

Light sensitive polymer is used to form the photoresist layer. Photoresist is a light sensitive material used to form patterned coating on a surface.

QUESTION: 19

 In CMOS fabrication,the photoresist layer is exposed to

Solution:

The photoresist layer is exposed to ultraviolet light to mark the regions where diffusion is to take place.

QUESTION: 20

 Few parts of photoresist layer is removed by using

Solution:

Few parts of photoresist layer is removed by treating the wafer with basic or acidic solution. Acidic solutions are those which have pH less than 7 and basic solutions have greater than 7.

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