Test: Noise In MOS Device


10 Questions MCQ Test VLSI System Design | Test: Noise In MOS Device


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This mock test of Test: Noise In MOS Device for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 10 Multiple Choice Questions for Electrical Engineering (EE) Test: Noise In MOS Device (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: Noise In MOS Device quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: Noise In MOS Device exercise for a better result in the exam. You can find other Test: Noise In MOS Device extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

Noise in VLSI circuits mean:

Solution:

In VLSI circuits noise limits the minimum signal level that a circuit process with acceptable quality.

QUESTION: 2

In probability Noise is described as :

Solution:

 Noise is a Random Process.

QUESTION: 3

Noise generated by independent devices are:

Solution:

Noise generated by independent devices are uncorrelated, eg: noise generated from resistor is not similar to noise generated from transistor.

QUESTION: 4

The 2 types of noise that the analog systems face during signal processing are:

Solution:

Device electronic noise and environmental noise affects signal processing of analog signals.

QUESTION: 5

Thermal noise is generated from:

Solution:

Thermal noise is due to random motion of electrons in a conductor.

QUESTION: 6

Thermal noise is generated from MOSFET by:

Solution:

Thermal noise is generated due to conduction of charge carriers in the channel.

QUESTION: 7

Thermal noise current in the MOSFET is proportional to:

Solution:

 Noise current I^2 = 4kTygm

QUESTION: 8

Flicker noise is found in MOSFET at:

Solution:

The interface between Gate oxide and silicon substrate generates flicker noise.

QUESTION: 9

Flicker noise originate due to:

Solution:

 Dangling bonds generate flicker noise.

QUESTION: 10

The average power of flicker noise depends on:

Solution:

 Depending on the Cleanness of oxide silicon interface flicker noise varies.

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