Test: Parameters Of MOS Transistors


10 Questions MCQ Test VLSI System Design | Test: Parameters Of MOS Transistors


Description
This mock test of Test: Parameters Of MOS Transistors for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 10 Multiple Choice Questions for Electrical Engineering (EE) Test: Parameters Of MOS Transistors (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: Parameters Of MOS Transistors quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: Parameters Of MOS Transistors exercise for a better result in the exam. You can find other Test: Parameters Of MOS Transistors extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

The work function difference is neagative for

Solution:

The work function difference between gate and Si (Φms) is negative for silicon substrate and polysilicon gate.

QUESTION: 2

Substrate bias voltage is positive for nMOS.

Solution:

Substrate bias voltage Vsb is positive for pMOS and negative for nMOS.

QUESTION: 3

 According to body effect, substrate is biased with respect to

Solution:

According to body effect, substrate is biased with respect to the source. Body effect can be seen as a change in the threshold voltage.

QUESTION: 4

 Increasing Vsb, _______ the threshold voltage

Solution:

 Increasing the substrate bias voltage Vsb, increases the threshold voltage because it depletes the channel of charge carriers.

QUESTION: 5

 Transconductance gives the relationship between

Solution:

Transconductance expresses the relationship between output current Ids and input voltage Vgs.

QUESTION: 6

Transconductance can be increased by

Solution:

 Transconductance gm of a MOS device can be increased by increasing its width and it does not depend on length.

QUESTION: 7

 Increasing the transconductance

Solution:

Increasing the transconductance gm results in increase in input capacitance and area occupied as it is directly proportional.

QUESTION: 8

Ids is _______ to length L of the channel

Solution:

 Ids is inversely proportional to the length L of the channel and using this relationship strong dependence of output conductance on channel length can be demonstrated.

QUESTION: 9

Switching speed of a MOS device depends on

Solution:

Switching speed of a MOS device depends on gate voltage above threshold and on carrier mobility and inversely as the square of channel length.

QUESTION: 10

A fast circuit requires

Solution:

A fast circuit requires gm as high as possible as the switching speed depends on gate voltage above threshold and on carrier mobility and inversely to square of channel length.

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