The built-in potential of p-n junction diode is a function of.
Formation of potential of p-n junction diode depends on temperature, biased voltage and doping density.
The correct answers are: Temperature, Biased voltage, Doping density
An ideal switch is one which has :
Characteristics of any ideal switch is that it should offer zero resistance when ON and infinite resistance when OFF.
The correct answers are: Zero resistance when ON, Infinite resistance when OFF
For a full wave rectifier:
Full wave rectifier consists of two diodes each with different polarity ends which help it keep running both in positive and negative half. Average or dc value of load current
The correct answers are: We need two diodes placed at opposite polarity, Ripple factor = 0.483, Maximum Rectification efficiency η = 81.1 %
Which of the following statements is true in case of zener diode?
We know that zener diode has sharp breakdown voltage. It is always reverse biased and heavily doped diode. There is similarity between forward characteristic curve of a diode.
The correct answers are: A zener diode has sharp breakdown voltage, A zener diode is always reverse biased, The zener diode is a heavily doped diode
Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?
When a p-type semiconductor having holes as majority carrier is clamped with a ntype semiconductor having electron as majority carrier.
Some electrons from n-side goes to p-side and some holes goes to n-side, thus creates a potential barrier, which
(i) depends on temperature
(ii) depends on fermi level
(iii) forbidden energy gap Eg
(iv) majority carriers
The correct answers are: It depends on difference between fermi levels on two sides of fermi level, It depends on forbidden energy-gap on two types of semiconductors, It depends on impurity concentration in p and n-type semiconductors
Which of the following devices is forward bias in its normal mode of operation.
Zener diode and Avalanche photodiode operates only in reverse bias condition. The correct answers are: Solar cell, LASER diode
If the barrier potential change with biasing of a p-n junction diode, then the barrier potential will.
For a p-n junction diode, barrier potential decreases with forward and increases with reverse biasing.
The correct answers are: increase with reverse bias, decrease with forward bias
For an intrinsic semiconductor, are respectively, the effective masses of electrons and holes near the corresponding band edges. At a finite temperature, the position of fermi level:
The finite temperature, the position of fermi level would depend on both
The correct answers are: depends on, depends on
Which of the following statements are true for a clamper?
Any clamper consists of a diode, resistor and capacitor. It does not require any inductor. It does not change the appearance but only shifts the dc level of any given signal.
The correct answers are: does not change appearance of input signal, shifts dc level of the waveform
Which of the following electronic devices are used to make a clamper?
A normal clamper consists of a diode, a resistor and a capacitor that shifts a waveform to a different dc level without changing the appearance of the applied signal.
The correct answers are: Capacitor, Diode, Resistor