Test: BJT Characteristics & Biasing - 1

# Test: BJT Characteristics & Biasing - 1

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## 10 Questions MCQ Test GATE Electrical Engineering (EE) 2023 Mock Test Series | Test: BJT Characteristics & Biasing - 1

Test: BJT Characteristics & Biasing - 1 for Electronics and Communication Engineering (ECE) 2023 is part of GATE Electrical Engineering (EE) 2023 Mock Test Series preparation. The Test: BJT Characteristics & Biasing - 1 questions and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus.The Test: BJT Characteristics & Biasing - 1 MCQs are made for Electronics and Communication Engineering (ECE) 2023 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: BJT Characteristics & Biasing - 1 below.
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Test: BJT Characteristics & Biasing - 1 - Question 1

### In a transitor, the value of α is 0.97. The value of current gain of common emitter configuration is

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Current gain of CE configuration is

Test: BJT Characteristics & Biasing - 1 - Question 2

### A transistor has IB = 100 μA and IC = 2 mA. If IB changes by 25 μA and IC changes by 0.6 mA, the Changes in the value of β Would be

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Test: BJT Characteristics & Biasing - 1 - Question 3

### For a transistor having α = 0.98, ICBO  = 5 μA and IB = 100 μA. The value of IC is

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Test: BJT Characteristics & Biasing - 1 - Question 4

For the circuit shown below, the collector to emitter voltage is

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Let the transistor be operating under active region.

Test: BJT Characteristics & Biasing - 1 - Question 5

The reverse leakage current of the transistor when connected in CB configuration is 0.2 μA and it is 18 μA when the same transistor is connected in CE configuration. The value of α and β of the transistor for a base current of 30 mA will be respectively

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Test: BJT Characteristics & Biasing - 1 - Question 6

The value of Vc for the transistor shown in figure below is

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Test: BJT Characteristics & Biasing - 1 - Question 7

Match List-I (Transistor configuration) with List-ll (Applications) and select the correct answer using the codes given below the lists:
List-I
A. Common emitter
B. Common base
C. Common collector

List-ll
1. For impedance matching
2. For high frequency circuits
3. For audio frequency circuits

Test: BJT Characteristics & Biasing - 1 - Question 8

Assertion (A): the dependency of base width on collector to emitter voltage is known as the “Early effect”.
Reason (R): Due to “Early effect”, α of the .transistor is increased by a larger value while maintaining a constant value of β.

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Test: BJT Characteristics & Biasing - 1 - Question 9

In forward mode n-p-n BJT, if we increase the voltage Vcc, the collector current increases

Test: BJT Characteristics & Biasing - 1 - Question 10

An emitter follower has high input impendance because

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## GATE Electrical Engineering (EE) 2023 Mock Test Series

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