Test: Basic FET Amplifiers- 1

# Test: Basic FET Amplifiers- 1

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## 10 Questions MCQ Test Topicwise Question Bank for Electrical Engineering | Test: Basic FET Amplifiers- 1

Test: Basic FET Amplifiers- 1 for Electronics and Communication Engineering (ECE) 2023 is part of Topicwise Question Bank for Electrical Engineering preparation. The Test: Basic FET Amplifiers- 1 questions and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus.The Test: Basic FET Amplifiers- 1 MCQs are made for Electronics and Communication Engineering (ECE) 2023 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Basic FET Amplifiers- 1 below.
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Test: Basic FET Amplifiers- 1 - Question 1

### When VGS of a JFET changes from -2.4 to-2 V, the drain current changes from 1 mA to 1.4 mA. What is the value of transconductance?

Detailed Solution for Test: Basic FET Amplifiers- 1 - Question 1

Test: Basic FET Amplifiers- 1 - Question 2

### In the CS amplifier shown in figure, if RD = 5 KΩ RG = 10 MΩ, μ = 50, and rd =  35 kΩ. The voltage gain (AV) of the amplifier is

Detailed Solution for Test: Basic FET Amplifiers- 1 - Question 2

The output voltage is,

Test: Basic FET Amplifiers- 1 - Question 3

### Consider the following statements associated with small signal FET model and A-parameter model of BJT (in CS configuration and CE configuration respectively): 1. Both FET and BJT have a Norton’s output circuit, but the current generated in BJT depends on the input current and not on the input voltage as in FET. 2. There is no feedback from output to input in the FET, whereas a feedback exist in the BJT through the parameter hre. 3. The high input resistance of the FET is replaced by an input resistance of about 1 kΩ for a CE amplifier. Which of the above statements is/are correct?

Detailed Solution for Test: Basic FET Amplifiers- 1 - Question 3

By observing the above two modes, we can find that all the statements are correct.

Test: Basic FET Amplifiers- 1 - Question 4

Assertion (A): FET is a much more ideal amplifier than the BJT at low frequencies.
Reason (R): FET has high input impedance and there is no feedback from output to input.

Test: Basic FET Amplifiers- 1 - Question 5

Match List-I (Small Signal FET Amplifier Circuits) with List-I I (Voltage Gain) and select the correct answer using the codes given below the lists:

Test: Basic FET Amplifiers- 1 - Question 6

An N-channe! JFET has IDSS = 8 mA and Vp = -5 V. The minimum values of VDS for pinch- off region and the drain current IDS for VGS= - 2V in the pinch-off region are respectively.

Detailed Solution for Test: Basic FET Amplifiers- 1 - Question 6

The minimum value of VDS for pinch-off to occur for VGS = -2V is

Test: Basic FET Amplifiers- 1 - Question 7

Assertion (A): The N-channel MOSFET may turnon prematurely.
Reason (R): The drain resistance of P-channel MOSFET is three times higher than that for an identical N-channei MOSFET

Detailed Solution for Test: Basic FET Amplifiers- 1 - Question 7

The N-channel MOSFET may turn on prematurely due to the positively charged contaminants. Reason is also a correct statement but not the correct explanation of assertion.

Test: Basic FET Amplifiers- 1 - Question 8

Assertion (A): The input noise is less in N-channel JFET than that in P-channel JFET.
Reason (R): The transconductance of N-channel JFET is smaller than that of P-channel JFET.

Detailed Solution for Test: Basic FET Amplifiers- 1 - Question 8

The transconductance of N-channel JFET is more than that of P-channel JFET. Hence, reason is not a correct statement.

Test: Basic FET Amplifiers- 1 - Question 9

A JFET amplifier with a voltage divider biasing circuit, shown in figure has the following parameters:
Vp = -2 V, IDSS = 4 mA, RD = 910 Ω, Rs =3 kΩ,
R1, = 12 MΩ, R2 = 8.75 MΩ and VDD = 24 V.

The value of the drain current ID at the operating point is

Detailed Solution for Test: Basic FET Amplifiers- 1 - Question 9

We have:

We know that,

Test: Basic FET Amplifiers- 1 - Question 10

The value of source resistance required to self bias an N-channel JFET with IDSS = 40 mA, Vp = -10 V, VGS = -5 V and VDSQ = 5V is

Detailed Solution for Test: Basic FET Amplifiers- 1 - Question 10

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