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# Test: BJT Construction & Operation

## 10 Questions MCQ Test Analog Circuits | Test: BJT Construction & Operation

Description
This mock test of Test: BJT Construction & Operation for Electronics and Communication Engineering (ECE) helps you for every Electronics and Communication Engineering (ECE) entrance exam. This contains 10 Multiple Choice Questions for Electronics and Communication Engineering (ECE) Test: BJT Construction & Operation (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: BJT Construction & Operation quiz give you a good mix of easy questions and tough questions. Electronics and Communication Engineering (ECE) students definitely take this Test: BJT Construction & Operation exercise for a better result in the exam. You can find other Test: BJT Construction & Operation extra questions, long questions & short questions for Electronics and Communication Engineering (ECE) on EduRev as well by searching above.
QUESTION: 1

### Which of the following is not a valid type of a BJT?

Solution:

A BJT is a device with a layer of semiconductor sandwitched between 2 unlike types of semiconductors and hence, PPN is not a valid type of a BJT.

QUESTION: 2

### In a BJT, the outer layers are much more thick as compared to the middle layer.

Solution:

In a BJT, the thickness of the middle layer or the base is thin as compared to the collector and emitter.

QUESTION: 3

### In a BJT, which of the following layers is heavily doped?

Solution:

In a BJT, emitter is heavily doped whereas base and collector are lightly doped.

QUESTION: 4

Considering the resistances of emitter, collector and base to be Re, Rc and Rb respectively, which of the following is the correct statements?

Solution:

As the base is lightly doped, the number of free charge carriers are less and hence the resistance is high and as the emitter is the most highly doped, its resistance is low.

QUESTION: 5

In a pnp-BJT, when the E-B junction is forward biased and no voltage is applied across C-B junction, what happens to the width of the depletion region in the E-B junction?

Solution:

On application of a forward bias voltage across E-B junction, the width of the depletion region decreases.

QUESTION: 6

Which of the following statements is true about proper functioning of a BJT?

Solution:

In a BJT, one junction is forward biased and the other is reverse biased depending upon the type of the transistor.

QUESTION: 7

What is the typical order of magnitude of the base current for a BJT?

Solution:

As the base current is quite lower as compared to the collector and emitter current, it is usually in the order of microamperes.

QUESTION: 8

The collector current in a BJT is temparature-independent.
a) True

Solution:

The collector current I C in a BJT is made up of two components – one due to majority carriers and the other due to minority carriers. The component of IC due to minority carriers i.e ICO is temparature sensitive.

QUESTION: 9

Which of the following currents in a BJT is also called leakage current?

Solution:

Leakage current in a BJT is the name given to ICO, which is due to the flow of minority carriers.

QUESTION: 10

Which of the following relations are correct?

Solution:

On applying KCL to the BJT, we get IC + IB = IE.