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Test: Basic Electronics- 1 - Electrical Engineering (EE) MCQ


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20 Questions MCQ Test SSC JE Electrical Mock Test Series 2025 - Test: Basic Electronics- 1

Test: Basic Electronics- 1 for Electrical Engineering (EE) 2024 is part of SSC JE Electrical Mock Test Series 2025 preparation. The Test: Basic Electronics- 1 questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: Basic Electronics- 1 MCQs are made for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Basic Electronics- 1 below.
Solutions of Test: Basic Electronics- 1 questions in English are available as part of our SSC JE Electrical Mock Test Series 2025 for Electrical Engineering (EE) & Test: Basic Electronics- 1 solutions in Hindi for SSC JE Electrical Mock Test Series 2025 course. Download more important topics, notes, lectures and mock test series for Electrical Engineering (EE) Exam by signing up for free. Attempt Test: Basic Electronics- 1 | 20 questions in 12 minutes | Mock test for Electrical Engineering (EE) preparation | Free important questions MCQ to study SSC JE Electrical Mock Test Series 2025 for Electrical Engineering (EE) Exam | Download free PDF with solutions
Test: Basic Electronics- 1 - Question 1

Which of the following is a unipolar diode?

Detailed Solution for Test: Basic Electronics- 1 - Question 1

In a unipolar device current is due to only one type of carriers (i.e. electrons or holes), while in bipolar device current is due to both holes and electrons.

Schottky diode or hot-carrier diode is a junction of n-type semiconductor and metal, in it electrons are sole carriers.

Test: Basic Electronics- 1 - Question 2

The reverse bias characteristics of semiconductor of a semiconductor diode is shown in

Detailed Solution for Test: Basic Electronics- 1 - Question 2

A diode in forward-bias conducts current just like normal conductor, while in reverse-bias prohibits current and only very small amount of current flows, called reverse saturation current.

After certain reverse voltage called reverse breakdown voltage the diode breaks down and conducts huge current.

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Test: Basic Electronics- 1 - Question 3

The phenomenon of thermal run away is associated with

Detailed Solution for Test: Basic Electronics- 1 - Question 3

Thermal runaway is a situation in which increase in temperature changes the conditions in a way that further causes temperature to increase.

In BJTs the collector current dissipates lot of heat, this increase in temperature causes increased flow of minority carriers from collector to base, further increasing the collector current. This increase in collector current further raise temperature, thus thermal runaway occurs ending in burnout of BJT.

Test: Basic Electronics- 1 - Question 4

What are the ON/OFF terminals of a transistor when it is operated as a switch?

Detailed Solution for Test: Basic Electronics- 1 - Question 4

Transistor switches can be used to switch low DC voltages ON or OFF by operating it in saturation or cut-off mode

The CE terminals act as ON/OFF terminals as shown in figure above.

Test: Basic Electronics- 1 - Question 5

The LED emits light of a particular colour because

Detailed Solution for Test: Basic Electronics- 1 - Question 5

LEDs are fabricated using direct bandgap semiconductors.In which, when electron transfers from conductor band to valence band and recombines with the holes the energy difference between the both bandsget converted in to light with frequency ‘ν’, it is related with energy as,

E = hν, where h is Planck’s constant.

Test: Basic Electronics- 1 - Question 6

UJT are used in

Detailed Solution for Test: Basic Electronics- 1 - Question 6

Uni Junction Transistor is a three terminal semiconductor device formed by single P-N junction. It functions as an ON-OFF switch and has unidirectional conductivity and negative resistance characteristics.

It is used to trigger SCR devices and used in relaxation oscillator.

Test: Basic Electronics- 1 - Question 7

In JFET, the application of reverse bias to the gate terminals will cause the depletion layers to

Detailed Solution for Test: Basic Electronics- 1 - Question 7

In JFET Gate and channel are opposite type of semiconductors with depletion layers in between them.

If reverse voltage is applied to Gate terminal the depletion region increases and channel width is reduced, this effect is called pinch-off effect, limiting the drain current

Test: Basic Electronics- 1 - Question 8

Two p-n junction diodes are connected back to back to make a transistor. Which one of the following is correct?

Detailed Solution for Test: Basic Electronics- 1 - Question 8

A transistor operation needs very small base width to allow the minority carriers, drifted from emitter to diffuse into collector.

By connecting two PN diodes back to back the transistor will have wide base causing the minority carriers from emitter to recombine in base region before they diffuse into collector. This reduces collector current or cut off entirely.

Test: Basic Electronics- 1 - Question 9

The gain of a CE amplifier is highest at

Detailed Solution for Test: Basic Electronics- 1 - Question 9

A common emitter amplifier acts as a bandpass amplifier due to reduced gain at low and high frequencies. This is due to source, emitter and parasitic capacitances.

Test: Basic Electronics- 1 - Question 10

In an electronic circuit transistor is used for switching ON and OFF a relay when the transistor switches OFF the relay a higher voltage appears across the transistor. How can a transistor be protected from this voltage?

Detailed Solution for Test: Basic Electronics- 1 - Question 10

In transistor relay circuit when relay is in OFF state, high reverse voltage is developed across relay terminals, this can damage the transistor. Hence a diode is connected parallel to the relay, this clamps the voltage across the relay and helps dissipate the energy in diode.

Test: Basic Electronics- 1 - Question 11

Which of the following is a bipolar device?

Detailed Solution for Test: Basic Electronics- 1 - Question 11

Gunn diode, FET and UJT are unipolar devices in which current is due to only one type of carrier. While tunnel diode is bipolar device in which both electrons and holes contribute to current.

Test: Basic Electronics- 1 - Question 12

Transistor biasing is done to keep _______ in the circuit.

Detailed Solution for Test: Basic Electronics- 1 - Question 12

Biasing of a transistor is done to keep the stable DC condition like VBE, IC needed for specific action of transistor, like amplification, switch, etc.

Test: Basic Electronics- 1 - Question 13

In an amplifier the maximum power transfer to the load resistance should be

Detailed Solution for Test: Basic Electronics- 1 - Question 13

In an amplifier the maximum power is transferred to the load when the load resistance is equal to output impedance of amplifier

Test: Basic Electronics- 1 - Question 14

What is the main source of distortion in a push-pull amplifier?

Detailed Solution for Test: Basic Electronics- 1 - Question 14

In push-pull amplifiers each transistor operates only for one half cycle of AC voltage, in it even harmonics are minimised, so distortion is mainly due to odd harmonics.

Hence of the given options third harmonics needs to be eliminated

Test: Basic Electronics- 1 - Question 15

The bonding forces in compound semiconductors, such as GaAs, arise form

Detailed Solution for Test: Basic Electronics- 1 - Question 15

In semiconductors like GaAs the elements Ga and As are in covalent bond. Arsenic has five valence electrons while gallium has three valence electrons. Therefore, in GaAs crystal Arsenic contribute one electron to Gallium and it is shared between both atoms in a covalent bond

Test: Basic Electronics- 1 - Question 16

ICBO in a transistor can be reduced by reducing:

Detailed Solution for Test: Basic Electronics- 1 - Question 16

ICBO is the reverse leakage current between collector and base while emitter is open it is given by ICBO=(1−α)IC−αIB. It is the reverse current in base collector junction, which is dependent on temperature at the junction and is reduced with decreasing current.

Test: Basic Electronics- 1 - Question 17

Zener diodes are used as:

Detailed Solution for Test: Basic Electronics- 1 - Question 17

Zener diodes in reverse bias starts conduct current at a certain reverse voltage known as Zener voltage. Above the Zener voltage the diode maintains constant voltage across its terminals for varying values of current, hence Zener diodes are used as voltage regulators.

Test: Basic Electronics- 1 - Question 18

The Trans conductance of a JFET is computed at constant VDS by:

Detailed Solution for Test: Basic Electronics- 1 - Question 18

In a JFET transconductance is defined as 

Hence it is computed at constant VDS by ratio of change in lto change of Vgs.

Test: Basic Electronics- 1 - Question 19

The intersection of the D.C. load line with the given base current curve is the

Detailed Solution for Test: Basic Electronics- 1 - Question 19

The intersection of DC load line with the parameter graph of a semiconductor device (for example base current vs VCE in transistor) gives operating point of the said device

Test: Basic Electronics- 1 - Question 20

Which among the following will possess a higher bandwidth, if two transistors are provided with unity gain frequency?

Detailed Solution for Test: Basic Electronics- 1 - Question 20

In transistor the Gain Bandwidth product is equal to unity, since gain is proportional to DC current gain hfe the transistor with lower hfe will have higher bandwidth.

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