Test: Basics of Semiconductor


25 Questions MCQ Test Basic Electronics Engineering for SSC JE (Technical) | Test: Basics of Semiconductor


Description
Attempt Test: Basics of Semiconductor | 25 questions in 50 minutes | Mock test for Electrical Engineering (EE) preparation | Free important questions MCQ to study Basic Electronics Engineering for SSC JE (Technical) for Electrical Engineering (EE) Exam | Download free PDF with solutions
QUESTION: 1

One electron volt equals

Solution:
QUESTION: 2

An excited electron is an atom returns to the ground state

Solution:
QUESTION: 3

For photo - Excitation to take place, the energy of the incident photon must

Where w is the energy difference between the two stationary states.

Solution:
QUESTION: 4

For forming p type germenium, the impurity atom must have valency of

Solution:
QUESTION: 5

For forming n - type germenium the impurity atom has valency of

Solution:
QUESTION: 6

In n- type semiconductor, new discrete energy levels get created

Solution:

For an n-type semiconductor, there are more electrons in the conduction band than there are holes in the valence band. This also implies that the probability of finding an electron near the conduction band edge is larger than the probability of finding a hole at the valence band edge. Therefore, the Fermi level is closer to the conduction band in an n-type semiconductor and it lies just below the conduction band.
 

QUESTION: 7

In p - type germanium, new discrete levels get created

Solution:
QUESTION: 8

When a donor atom is added to a semiconductor, the donor atom

Solution:
QUESTION: 9

Drift current in germanium is caused by

Solution:
QUESTION: 10

Acceptor impurity atom in germanium results in

Solution:
QUESTION: 11

In germanium at room temperature, the forbidden energy gap EG is about

Solution:
QUESTION: 12

In silicon at room temperature, the forbidden energy gap EG is about

Solution:
QUESTION: 13

Heavy doping of a semiconductor corresponds to impurity concentration of 1 part in

Solution:
QUESTION: 14

In any conductor, the hall voltage VH is proportional to

Where B is the existing magnetic field

Solution:
QUESTION: 15

At 0 deg K the percentage of quantum state occupied upto Fermi level is

Solution:
QUESTION: 16

In an n-type semiconductor, as temperature T increases, the Fermi level EF

Solution:
QUESTION: 17

A semiconductor has ………… temperature coefficient of resistance.

Solution:
QUESTION: 18

Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

Solution:
QUESTION: 19

In a p - type semiconductor, as the acceptor concentration NA is increased, the Fermi level

Solution:
QUESTION: 20

In extrinsic semiconductor, conductivity varies with respect to temperature.

Solution:

For Extrinsic Semiconductors: The conductivity decreases with rise in temperature. This is because the number of e- hole pairs increases rapidly heading to lesser effect of doping & more of neutralization of these pairs.

QUESTION: 21

Extrinsic semiconductor is a

Solution:
QUESTION: 22

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor …

Solution:
QUESTION: 23

Which of following is not a trivalent impurity atom?

Solution:
QUESTION: 24

With the use of hall effect we can determine

Solution:
QUESTION: 25

Of a given specimen, hall voltage is negative the semiconductor will be

Solution:
Use Code STAYHOME200 and get INR 200 additional OFF
Use Coupon Code