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Electrical Engineering (EE) Exam  >  Electrical Engineering (EE) Tests  >  Basic Electronics Engineering JE (Technical)  >  Test: N Junction Diode - Electrical Engineering (EE) MCQ

Test: N Junction Diode - Electrical Engineering (EE) MCQ


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25 Questions MCQ Test Basic Electronics Engineering JE (Technical) - Test: N Junction Diode

Test: N Junction Diode for Electrical Engineering (EE) 2025 is part of Basic Electronics Engineering JE (Technical) preparation. The Test: N Junction Diode questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: N Junction Diode MCQs are made for Electrical Engineering (EE) 2025 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: N Junction Diode below.
Solutions of Test: N Junction Diode questions in English are available as part of our Basic Electronics Engineering JE (Technical) for Electrical Engineering (EE) & Test: N Junction Diode solutions in Hindi for Basic Electronics Engineering JE (Technical) course. Download more important topics, notes, lectures and mock test series for Electrical Engineering (EE) Exam by signing up for free. Attempt Test: N Junction Diode | 25 questions in 50 minutes | Mock test for Electrical Engineering (EE) preparation | Free important questions MCQ to study Basic Electronics Engineering JE (Technical) for Electrical Engineering (EE) Exam | Download free PDF with solutions
Test: N Junction Diode - Question 1
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The piecewise linear V - I characteristic of a diode is shown in the given figure. When the applied voltage is 6V the current through the diode will be

Detailed Solution for Test: N Junction Diode - Question 1

The correct answer is D. 54 mA

From the piecewise linear V-I characteristic of the diode, when the applied voltage reaches 6V, we can observe the corresponding current value. The graph indicates that at this voltage level, the current flowing through the diode is 54 mA. This relationship is crucial for understanding how diodes operate under different voltage conditions, highlighting their non-linear behavior.

Details on Other Options:

  • A: This option is incorrect as the current of 42 mA does not correspond to the voltage of 6V on the V-I characteristic, indicating a lower current than what is observed.
  • B: This option is incorrect because 48 mA is also below the expected current for a 6V input, as indicated by the graph.
  • C: This option is incorrect since 51 mA is still less than the observed current at 6V, which confirms that it does not align with the characteristic curve.

Conclusion:

The D, as the most accurate and relevant option, stands out for its precise alignment with the observed current at 6V, clearly differentiating it from the other options. Thus, 54 mA is the correct choice.

Test: N Junction Diode - Question 2
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The change in barrier potential of a silicon p-njunction with temperature is

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Test: N Junction Diode - Question 3
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 Which of the following is NOT associated witha p-n junction

Test: N Junction Diode - Question 4
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The junction capacitance of a p-n junctiondepends on
Test: N Junction Diode - Question 5
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The diffusion capacitance of a p-n junction diode
Test: N Junction Diode - Question 6
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Which junction has least junction capacitance/
Test: N Junction Diode - Question 7
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When a junction diode is used in switchingapplications, the forward recovery time is
Test: N Junction Diode - Question 8
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Silicon is preferred for manufacturing zener diodebecause it
Test: N Junction Diode - Question 9
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A zener diode, when used in voltage stabilizationcircuits, is biased in
Test: N Junction Diode - Question 10
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Which one of the following statements is correct? A tunnel diode is always biased
Test: N Junction Diode - Question 11
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The values of voltage (VD) across a tunnel- diode corresponding to peak and valley currents are VP and VV respectively. The range of tunnel – diode voltage VD for which the slope of its I - VD characteristic is negative would be
Test: N Junction Diode - Question 12
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A PIN diode is
Test: N Junction Diode - Question 13
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Intermediate (l) layer of PIN - diode impartswhich one of the following features to a pnjunction diode ?
Test: N Junction Diode - Question 14
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A PIN diode is frequently used as a
Test: N Junction Diode - Question 15
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A step - recovery diode
Test: N Junction Diode - Question 16
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Write the incorrect statement. A Schottky diode
Test: N Junction Diode - Question 17
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Schottky harrier can be used as
Test: N Junction Diode - Question 18
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The following is not an application of varactordiode ?
Test: N Junction Diode - Question 19
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For harmonic generation, the diode that can beused is
Test: N Junction Diode - Question 20
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A semiconductor photodiode uses:
Test: N Junction Diode - Question 21
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Avalanche breakdown results basically due to
Test: N Junction Diode - Question 22
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Zener breakdown results are applied
Test: N Junction Diode - Question 23
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In P-N diode, with the increase in the magnitudeof reverse bias, the reverse saturation current l0.
Test: N Junction Diode - Question 24
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The p-region has a greater concentration of __________ as compared to the n-region in a P-N junction.
Test: N Junction Diode - Question 25
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In a PN junction with no external voltage, the electric field between acceptor and donor ions is called a
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