Analog Electronics 3

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This mock test of Analog Electronics 3 for Electronics and Communication Engineering (ECE) helps you for every Electronics and Communication Engineering (ECE) entrance exam. This contains 10 Multiple Choice Questions for Electronics and Communication Engineering (ECE) Analog Electronics 3 (mcq) to study with solutions a complete question bank. The solved questions answers in this Analog Electronics 3 quiz give you a good mix of easy questions and tough questions. Electronics and Communication Engineering (ECE) students definitely take this Analog Electronics 3 exercise for a better result in the exam. You can find other Analog Electronics 3 extra questions, long questions & short questions for Electronics and Communication Engineering (ECE) on EduRev as well by searching above.

QUESTION: 1

When the gate-to-source voltage V_GS of a MOSFET with a threshold voltage of 400mV, working in saturation is 900mV, the drain current is observed to be 1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied V_GS of 1400mV is

A.
0.5 mA
B.
2.0 mA
C.
3.5 mA
D.
4.0 mA

Solution:

The MOSFET current is saturation is given by,

*Answer can only contain numeric values

QUESTION: 2

What percentage of current I_DSS is the drain current for a JFET, if the gate to source voltage is 65% of the pinch-off voltage.

Solution:

V_GS = 0.65 V_p

The drain current of JFET is given as

QUESTION: 3

The ‘Pinch-off’ voltage of a JFET is 4 V. Then the off gate voltage of JFET is

A.
4V
B.
2.5 V
C.
2 V
D.
1 V

Solution:

The Cut off gate voltage is also known as pinch off voltage at which the drain current becomes zero.

*Answer can only contain numeric values

QUESTION: 4

A MOSFET operating in saturation mode is shown in the below figure. The drain current is given as I_D = ½ (V_GS – 0.75)² mA If V_S = 5V, then the value of R_Sin kΩ is __________

Solution:

The bias used in the given circuit is voltage divider bias. The gate voltage

∴ Gate source voltage V_GS = V_G - V_S

= 8 – 5

= 3 V

∴ I_D = ½ (3 - 0.75)² mA

≅ 2.53 mA

V_S = R_SI_D

*Answer can only contain numeric values

QUESTION: 5

For the amplifier shown below, the drain current changes from 5 mA to 7 mA when the gate voltage D changed from -4.0 V to -3.7 V. The voltage gain of the amplifier is _____

Solution:

The gain of the amplifier is given by:

A_v = - g_mr_D

g_m: trans conductance of transistor

r_D: effective AC resistance seen by drain terminal

g_m = 6.66 ms

r_D = R_D||R_L = 6k||6k = 3 kΩ

A_v = -6.66 × 10^-3 × 3 × 10³

A_v = -19.98 ≈ 20

QUESTION: 6

The NMOS transistors in the circuit below have V_T = 1 V, μ_nc_ox = 120 μA/V², λ = 0 and L₁ = L₂ = L₃ = 1 μm. The values of width of each of Q₁, Q₂, Q₃ such that the voltage values are as shown in below figure are

A.
4 μm. 1 μm, 4 μm
B.
4 μm. 4 μm, 1 μm
C.
4 μm. 4 μm, 4 μm
D.
8 μm. 2 μm, 8 μm

Solution:

Let I_D be the drain current, it will be common for all three transistors. All the transistors are operating in saturation since V_D = V_G

At transistor Q₃
Given I_D = 120 μA

⇒ W₂ = 2 μm

*Answer can only contain numeric values

QUESTION: 7

A common source amplifier biased at I_D = 0.25 mA with R_D = 20 kΩ and early voltage V_A = 50 V and overdrive voltage (V_GS – V_T)_DC = 0.25 V. If the input is fed through 100 kΩ and output are taken from 20 kΩ loads then the overall gain of the amplifier is _____ V/V.

Solution:

The Ac equivalent circuit can be drawn as

I_D = 0.25 mA; V_A = 50 V; V_ov (= V_Gs - V_T) = 0.25 V

(∵ r_O >> R_D)

= -36.36 V/V

A_v(Overall gain) = -g_m(R_D|| r_O|| R_L)

= -2 mΩ^-1 × 9.53 kΩ

≃ -19 V/V

QUESTION: 8

The transistor I the circuit is shown below has parameters I_DSS = 8 mA and V_P = -4 V. The value of V_DS is___

A.
2.7 V
B.
2.85 V
C.
-1.3 V
D.
1.3 V

Solution:

Assume the transistor in saturation,

Assumption is correct.

Hence V_DS = 2.85 V.

*Answer can only contain numeric values

QUESTION: 9

The small signal resistance (dV_C/dI_D) of the n-channel MOSFET shown in figure below at bias voltage V_C = 2V is (in kΩ) _________

Given μ_nC_ox W/L = 40μ A/V²

V_T = 1 V

Solution:

Since V_DS = V_GS the device is in saturation

= 40 × 10^-6 (2 - 1)

Hence small signal resistance

= 25 kΩ

*Answer can only contain numeric values

QUESTION: 10

In the circuit shown below the parameters are gm =

Solution:

The small signal equivalent circuit is as shown below

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10 Questions MCQ Test GATE ECE (Electronics) 2022 Mock Test Series | Analog Electronics 3

What percentage of current I_DSS is the drain current for a JFET, if the gate to source voltage is 65% of the pinch-off voltage.

The ‘Pinch-off’ voltage of a JFET is 4 V. Then the off gate voltage of JFET is

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