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# Basic FET Circuits - MCQ Test

## 15 Questions MCQ Test Mock Tests Electronics & Communication Engineering GATE 2020 | Basic FET Circuits - MCQ Test

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This mock test of Basic FET Circuits - MCQ Test for Railways helps you for every Railways entrance exam. This contains 15 Multiple Choice Questions for Railways Basic FET Circuits - MCQ Test (mcq) to study with solutions a complete question bank. The solved questions answers in this Basic FET Circuits - MCQ Test quiz give you a good mix of easy questions and tough questions. Railways students definitely take this Basic FET Circuits - MCQ Test exercise for a better result in the exam. You can find other Basic FET Circuits - MCQ Test extra questions, long questions & short questions for Railways on EduRev as well by searching above.
QUESTION: 1

### In the circuit shown in fig. the transistor parameters are as follows: Threshold voltage VTN = 2V Conduction parameter Kn = 0.5mA/V2 Que: VGS = ?

Solution:  Assume that transistor in saturation region QUESTION: 2

### In the circuit shown in fig. the transistor parameters are as follows: Threshold voltage VTN = 2V Conduction parameter Kn = 0.5mA/V2 Que: ID =?

Solution: QUESTION: 3

### In the circuit shown in fig. the transistor parameters are as follows: Threshold voltage VTN = 2V Conduction parameter Kn = 0.5mA/V2 Que: VDS = ?

Solution:  QUESTION: 4

In the circuit shown in fig. the transistor parameter are as follows:  Que:

VGS =?

Solution:  QUESTION: 5

In the circuit shown in fig. the transistor parameter are as follows:  Que: ID = ?

Solution: QUESTION: 6

The parameter of the transistor in fig.  are VTN = 1.2 V, Kn = 0.5mA / V2 and λ = 0. The voltage VDS is Solution:  VGS = 1.52 V, VGS = VDS

QUESTION: 7

The parameter of the transistor in fig. are VTN = 0.6  V  and Kn = 0.2 mA / V2 . The voltage VS is Solution:  QUESTION: 8

In the circuit of fig. the transistor parameters are VTN = 1.7 V and Kn = 0.4mA / V2. If ID = 0.8 mA and VD = 1 V, then value of resistor RS and RD are respectively

Solution:  QUESTION: 9

In the circuit of fig. the PMOS transistor has parameter VTP = 1.5 V, kp' =  25 μA/V2 , L = 4 μm and λ = 0.If ID = 0.1 mA and VSD = 2.5 V, then value of W will be Solution:  QUESTION: 10

The PMOS transistor in fig. has parameters Solution:  QUESTION: 11

The parameters for the transistor in circuit of fig. are VTN = 2 V and Kn = 0.2mA / V2. The power dissipated in the transistor is Solution:

Assume transistor in saturation QUESTION: 12

Consider the circuit shown in fig. The both transistor have parameter as follows

VTN = 0.8V, kn' = 30 μA/V2

Que: If the width-to-length ratios of M1 and M2 are

(W/L)1 = (W/L)2 = 40

The output Vo is

Solution:

For both transistor VDS = VGS , QUESTION: 13

Consider the circuit shown in fig. The both transistor have parameter as follows

VTN = 0.8V, kn' = 30 μA/V2

Que: If the ratio is (W/L)1 = 40 and (W/L)2 = 15, then v0 is

Solution:  QUESTION: 14

In the circuit of fig. the transistor parameters are VTN =1 V and kn' = 36 μA/ V2 .If ID = 0.5 mA, V1 = 5 V and V= 2 V then the width to-length ratio required in each transistor is  Solution:

Each transistor is biased in saturation because QUESTION: 15

The transistors in the circuit of fig. have parameter  VTN = 0.8V, kn' = 40 μA/V2 and λ = 0 .The width-to-length ratio of M2 is (W/L)2 = 1. If Vo = 0.10V when vi = 5 V, then (W/L)1 for M1 is Solution:

M2 is in saturation because 