Courses

# Electronic Devices - MCQ Test 1

## 15 Questions MCQ Test Mock Tests Electronics & Communication Engineering GATE 2020 | Electronic Devices - MCQ Test 1

Description
This mock test of Electronic Devices - MCQ Test 1 for Electronics and Communication Engineering (ECE) helps you for every Electronics and Communication Engineering (ECE) entrance exam. This contains 15 Multiple Choice Questions for Electronics and Communication Engineering (ECE) Electronic Devices - MCQ Test 1 (mcq) to study with solutions a complete question bank. The solved questions answers in this Electronic Devices - MCQ Test 1 quiz give you a good mix of easy questions and tough questions. Electronics and Communication Engineering (ECE) students definitely take this Electronic Devices - MCQ Test 1 exercise for a better result in the exam. You can find other Electronic Devices - MCQ Test 1 extra questions, long questions & short questions for Electronics and Communication Engineering (ECE) on EduRev as well by searching above.
QUESTION: 1

### A BJT with one junction forward biased and either Emitter or collector is open operates in

Solution:

Charge storage will be positive and higher so it must enter into saturation.

QUESTION: 2

### A, N-channel Si (εr = 12) FET with a channel width a = 2 × 10−6 meter is doped with 1021 e’s / m3. The value of pinch-off voltage is _________ V.

Solution: QUESTION: 3

### A diode which is in reverse bias at 3 volt has a junction capacitance of 20 pF when reverse bias is increased to 24 volt then junction capacitance becomes 8 pF. The doping profile and contact potential are

Solution: QUESTION: 4

A potential difference of 5 volt is applied across a uniform wire of length 50 meter. Calculate drift velocity of electrons through the wire, If relaxation time is 10−14 sec. (Given Mass of electron, m = 9.1 × 10−31 kg)

Solution:  QUESTION: 5

For an ideal Ge forward bias diode, the change in diode voltage to increase forward bias diode current 10 times is _________ mV.

Solution:   QUESTION: 6

Which one of the following statements is correct?In the context of I.C. fabrication metallization means

Solution:

Formation of inter connecting conduction pattern and bounding pads

QUESTION: 7

If two FET's are connected in parallel and have µ1 = 2, µ2 = 3 and rd1 = 2 kΩ, rd2 = 3 kΩ, what is equivalent value of µ and rd.

Solution:  QUESTION: 8

Which of the following semi-conductors are used for solar-cells?

1. Si     2. Ge    3. GaAs     4. CdS

Solution: QUESTION: 9

Temp. Coefficient of resistivity in an Intrinsic Semiconductor is

Solution:
QUESTION: 10

Under low level injection assumption, the main driving current in an extrinsic semiconductor of n-type is

Solution:

Under low level injection, hold drift current being directly proportional to concentration of holes is negligible.

QUESTION: 11

The following statements are related to a tunnel diode

1. Fermi level in n-side lies inside valence band

2. Excellent conduction is possible in reverse bias

3. In reverse bias negative resistance is exhibited

4. VP > VV

5. It can act as oscillator

6. The magnitude of lP is decided by impurity concentration and Junction area

7. Ge tunnel diode is used for commercial applications

Which of the above statements are false?

Solution:
QUESTION: 12

For a NPN transistor which operates in active region then main stream of current in base is

Solution:
QUESTION: 13

Which of the following diodes work under reverse bias condition? 1. Zener 2. Varacter 3. Photo diode 4. LED

Solution:

LED works in forward biased condition.

QUESTION: 14

In a forward bias photodiode an increase in incident light intensity causes diode current to

Solution:

Due to light new electrons and hole pairs are produced.

QUESTION: 15

In an unbiased P-N Junction zero current implies that

Solution: