Courses

# Test: Basic BJT Circuits

## 20 Questions MCQ Test GATE ECE (Electronics) 2022 Mock Test Series | Test: Basic BJT Circuits

Description
This mock test of Test: Basic BJT Circuits for Electronics and Communication Engineering (ECE) helps you for every Electronics and Communication Engineering (ECE) entrance exam. This contains 20 Multiple Choice Questions for Electronics and Communication Engineering (ECE) Test: Basic BJT Circuits (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: Basic BJT Circuits quiz give you a good mix of easy questions and tough questions. Electronics and Communication Engineering (ECE) students definitely take this Test: Basic BJT Circuits exercise for a better result in the exam. You can find other Test: Basic BJT Circuits extra questions, long questions & short questions for Electronics and Communication Engineering (ECE) on EduRev as well by searching above.
QUESTION: 1

Solution:
QUESTION: 2

Solution:

QUESTION: 3

### For the transistor in circuit shown in fig. β = 200. Determine the value of IE and IC for given value of VB in question. If VB = 2V

Solution:

Transistor is in stauration. The saturation voltage
VCE = 0.2V

QUESTION: 4

The transistor in circuit shown in fig. has β = 200. Determine the value of voltage Vo for given value of VBB.

If VBB = 0

Solution:

VBB = 0, Transistor is in cutoff region

QUESTION: 5

The transistor in circuit shown in fig. has β = 200. Determine the value of voltage Vo for given value of VBB.

If VBB = 1V

Solution:

QUESTION: 6

The transistor in circuit shown in fig. has β = 200. Determine the value of voltage Vo for given value of VBB.

If VBB = 2V

Solution:

QUESTION: 7

The transistor shown in the circuit of fig. has β = 150. Determine Vo for given value of
IQ in question

If IQ = 0.1 mA

Solution:

I= 0.1 mA

QUESTION: 8

The transistor shown in the circuit of fig. has β = 150. Determine Vo for given value of  IQ in question

If IQ = 0.5 mA

Solution:

IE = IQ = 0.5 mA

QUESTION: 9

The transistor shown in the circuit of fig. has β = 150. Determine Vo for given value of  IQ in question

If IQ = 2mA

Solution:

Transistor is in saturation

QUESTION: 10

For the circuit in fig. VB = V and  β = 50. The value of VB is

Solution:

QUESTION: 11

For the circuit shown in fig. VCB = 0.5 V and β =100. The value of IQ is

Solution:

QUESTION: 12

For the circuit shown in fig. the emitter voltage is VE = 2 V. The value of α is

Solution:

QUESTION: 13

For the transistor in fig. β = 50. The value of voltage VEC  is

Solution:

QUESTION: 14

The current gain of the transistor shown in the circuit of fig. is β = 125. The Q-point values (ICQ , VCEQ ) are

Solution:

QUESTION: 15

For the circuit shown in fig. , let β = 75. The Q-point (ICQ , VCEQ ) is

Solution:

QUESTION: 16

The current gain of the transistor shown in the circuit of fig. is β = 100. The values of Q-point (ICQ , VCEQ ) is

Solution:

R1 =12 Ω, R2 = 2 Ω

QUESTION: 17

For the circuit in fig. , let β = 60. The value of VECQ  is

Solution:

QUESTION: 18

All transistor in the N output mirror in fig. are matched with a finite gain β and early voltage VA = ∞. The expression for each load current is

Solution:

QUESTION: 19

Consider the basic three transistor current source in fig. Assume all transistor are matched with finite gain and early voltage VA  = ∞.The expression for Io is

Solution:

QUESTION: 20

Consider the wilder current source of fig. Both of transistor are identical and β>>1 and VBE1 = 0.7 V. The value of resistance R1 and RE to produce Iref  = 1 mA and Io = 12 μA is (Vt = 0.026)

Solution:

If β>>1 and transistor are identical