Test: Electronic Devices - 1 - Electronics and Communication Engineering (ECE) MCQ

# Test: Electronic Devices - 1 - Electronics and Communication Engineering (ECE) MCQ

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## 15 Questions MCQ Test GATE ECE (Electronics) Mock Test Series 2025 - Test: Electronic Devices - 1

Test: Electronic Devices - 1 for Electronics and Communication Engineering (ECE) 2024 is part of GATE ECE (Electronics) Mock Test Series 2025 preparation. The Test: Electronic Devices - 1 questions and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus.The Test: Electronic Devices - 1 MCQs are made for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Electronic Devices - 1 below.
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Test: Electronic Devices - 1 - Question 1

### A BJT with one junction forward biased and either Emitter or collector is open operates in

Detailed Solution for Test: Electronic Devices - 1 - Question 1

Charge storage will be positive and higher so it must enter into saturation.

Test: Electronic Devices - 1 - Question 2

### A, N-channel Si (εr = 12) FET with a channel width a = 2 × 10−6 meter is doped with 1021 e’s / m3. The value of pinch-off voltage is _________ V.

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Test: Electronic Devices - 1 - Question 3

### A diode which is in reverse bias at 3 volt has a junction capacitance of 20 pF when reverse bias is increased to 24 volt then junction capacitance becomes 8 pF. The doping profile and contact potential are

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Test: Electronic Devices - 1 - Question 4

A potential difference of 5 volt is applied across a uniform wire of length 50 meter. Calculate drift velocity of electrons through the wire, If relaxation time is 10−14 sec. (Given Mass of electron, m = 9.1 × 10−31 kg)

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Test: Electronic Devices - 1 - Question 5

For an ideal Ge forward bias diode, the change in diode voltage to increase forward bias diode current 10 times is _________ mV.

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Test: Electronic Devices - 1 - Question 6

Which one of the following statements is correct?In the context of I.C. fabrication metallization means

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Formation of inter connecting conduction pattern and bounding pads

Test: Electronic Devices - 1 - Question 7

If two FET's are connected in parallel and have µ1 = 2, µ2 = 3 and rd1 = 2 kΩ, rd2 = 3 kΩ, what is equivalent value of µ and rd.

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Test: Electronic Devices - 1 - Question 8

Which of the following semi-conductors are used for solar-cells?

1. Si     2. Ge    3. GaAs     4. CdS

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Test: Electronic Devices - 1 - Question 9

Temp. Coefficient of resistivity in an Intrinsic Semiconductor is

Test: Electronic Devices - 1 - Question 10

Under low level injection assumption, the main driving current in an extrinsic semiconductor of n-type is

Detailed Solution for Test: Electronic Devices - 1 - Question 10

Under low level injection, hold drift current being directly proportional to concentration of holes is negligible.

Test: Electronic Devices - 1 - Question 11

The following statements are related to a tunnel diode

1. Fermi level in n-side lies inside valence band

2. Excellent conduction is possible in reverse bias

3. In reverse bias negative resistance is exhibited

4. VP > VV

5. It can act as oscillator

6. The magnitude of lP is decided by impurity concentration and Junction area

7. Ge tunnel diode is used for commercial applications

Which of the above statements are false?

Test: Electronic Devices - 1 - Question 12

For a NPN transistor which operates in active region then main stream of current in base is

Test: Electronic Devices - 1 - Question 13

Which of the following diodes work under reverse bias condition? 1. Zener 2. Varacter 3. Photo diode 4. LED

Detailed Solution for Test: Electronic Devices - 1 - Question 13

LED works in forward biased condition.

Test: Electronic Devices - 1 - Question 14

In a forward bias photodiode an increase in incident light intensity causes diode current to

Detailed Solution for Test: Electronic Devices - 1 - Question 14

Due to light new electrons and hole pairs are produced.

Test: Electronic Devices - 1 - Question 15

In an unbiased P-N Junction zero current implies that

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