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Which of the following quantities cannot be measured/determined using Hall Effect?
The ratio of hole diffusion current to the electron diffusion current in an infinite pn junction is 4. If conductivity on pside is 1.4 S/cm and on nside is 2.8 S/cm, then the ratio of diffusion length L_{n} and L_{p} (ie L_{n}/L_{p}) is _______.
Under high electric fields, in a semiconductor with increasing electric field,
The energy band structure of ntype semiconductor is as shown below
The probability that the donor energy state is empty is (up to 3 significant digits)
In a hypothetical semiconductor hole concentration is 2 × 10^{15}/cm^{3} and electron concentration is 1 × 10^{15}/cm^{3}. The mobility of holes is and mobility of electrons is
If the specimen is subjected to hall measurement. Then the measured hall coefficient (R_{H}) is
In a germanium semiconductor at 127°C has a hole concentration gradient between two points 1.5 × 10^{22}/m^{3}. If the hole mobility in germanium is 800 cm^{2}/vs, then the diffusion current density is ______ A/m^{2}.
2 Consider two energy levels: E_{1}, E eV above the Fermi level and E_{2}, EeV below the Fermi level. P_{1} and P_{2} are respectively the probabilities of E_{1} being occupied by an electron and E_{2} being empty. Then
A silicon sample is dope with unknown concentration of Arsenic, such that the fermi level (E_{F}) is 0.407 eV relative to intrinsic level (E_{i}). The conductivity of the silicon sample after doping is______(Ω – cm)^{1}.
The mobility of electrons μ_{n} = 3800 cm^{2}/vs and holes μ_{p} = 1800 cm^{2}/vs. Take kT = 0.0259 eV at 300°K and intrinsic concentration n_{i} = 1.5 × 10^{10} cm^{3}
The effective density of states in conduction and valence band N_{C} and N_{v} at 300K is 4.7x10^{17 }cm^{−3 }and 7x10^{18}cm^{−3} respectively. The bandgap of the mentioned semiconductor is 1.42eV at 300K. The intrinsic carrier concentration is:
Use Boltzmann constant k = 8.62 x 10^{−5 }eV/K
Holes are being steadily injected into a region of ntype silicon. In the steady state, the excess hole concentration profile is shown. [The term excess means over and above concentrations p_{no}]
If D_{p} = 12 cm^{2}/sec N_{D} = 10^{16}/cm^{3}, n_{i} = 1.5 × 10^{10}/cm^{3} and w = 5 μm.
The current density that will flow in xdirection is _____ nA/cm^{2}.
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24 docs263 tests

Test: Electronic Devices  3 Test  10 ques 
Test: Electronic Devices  4 Test  10 ques 
Test: Electronic Devices  5 Test  10 ques 
Test: Electronic Devices  6 Test  10 ques 
Test: The Bipolar Junction Transistor Test  20 ques 