Test: Electronic Devices - 2 - Electronics and Communication Engineering (ECE) MCQ

# Test: Electronic Devices - 2 - Electronics and Communication Engineering (ECE) MCQ

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## 20 Questions MCQ Test GATE ECE (Electronics) Mock Test Series 2025 - Test: Electronic Devices - 2

Test: Electronic Devices - 2 for Electronics and Communication Engineering (ECE) 2024 is part of GATE ECE (Electronics) Mock Test Series 2025 preparation. The Test: Electronic Devices - 2 questions and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus.The Test: Electronic Devices - 2 MCQs are made for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Electronic Devices - 2 below.
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Test: Electronic Devices - 2 - Question 1

### For a P-channel Ge JFET, it is having doping concentration of Na = 1.77 × 1015 cm−3 and Nd = 3.53 × 1018 per cm3, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)  Q. What is value of internal pinch-off voltage?

Detailed Solution for Test: Electronic Devices - 2 - Question 1

Test: Electronic Devices - 2 - Question 2

### For a P-channel Ge JFET, it is having doping concentration of Na = 1.77 × 1015 cm−3 and Nd = 3.53 × 1018 per cm3, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)  Q. What is value of pinch-off voltage?

Detailed Solution for Test: Electronic Devices - 2 - Question 2

Test: Electronic Devices - 2 - Question 3

### If saturation currents of 2 diodes are 1 µA and 2 µA. If break down voltages of diode are same and are equal to 100 volt, what is value of current in D1. Q. If V = 90 volt

Test: Electronic Devices - 2 - Question 4

If saturation currents of 2 diodes are 1 µA and 2 µA.
If break down voltages of diode are same and are equal to 100 volt, what is value of current in D1.

Q.

If V = 110 volt

Test: Electronic Devices - 2 - Question 5

For Si transistor, if β ≥ 30 and ICBO = 10 nA  The minimum value of R, for transistor to remain in active region for vi = 12 volt, is __________ kΩ.

Test: Electronic Devices - 2 - Question 6

A sample of silicon (uniformly doped n-type) at T = 300° K has the electron concentration varying linearly with distance as shown in the figure

The diffusion current is found to be −1120 A/cm2. If the diffusion constant Dn = 35 cm2/s, the electron concentration at x = 0 is

Detailed Solution for Test: Electronic Devices - 2 - Question 6

Test: Electronic Devices - 2 - Question 7

In a semiconductor sample,

where LP (hole diffusion length) = 4.8 × 10−4 cm

Hole diffusion coefficient DP = 20 cm2/s

The hole diffusion current density at x = 0 is

Detailed Solution for Test: Electronic Devices - 2 - Question 7

Test: Electronic Devices - 2 - Question 8

In the plot of log I vs V for a semiconductor Ge diode, the slope at room temperature is _________. Assume V >> VT and room temperature 27°C.

Detailed Solution for Test: Electronic Devices - 2 - Question 8

Test: Electronic Devices - 2 - Question 9

Consider a p-type semiconductor which is lightly doped i.e. condition of p >> n is not valid. p, n, ni are holes, electrons and intrinsic carrier concentration respectively. Then 2n + NA is ___________ if NA is immobile acceptor ions concentration

Detailed Solution for Test: Electronic Devices - 2 - Question 9

According to charge neutrality,

Test: Electronic Devices - 2 - Question 10

Consider the following network

VL is to be maintained at 10 V.
The correct representation of VL versus RL is

Detailed Solution for Test: Electronic Devices - 2 - Question 10

RLmin to turn-on the zener diode

Test: Electronic Devices - 2 - Question 11

Consider the following sentences in respect of LEDs (Light emitting diodes) and semiconductor laser diode.
S1 :  Only direct band gap type semiconductors are suitable for fabrication of LEDs.
S2 : Both direct band gap type and indirect band gap type semiconductors are suitable for fabrication of semiconductor laser diode.
Choose the best alternative

Detailed Solution for Test: Electronic Devices - 2 - Question 11

For the fabrication of semiconductor laser diode, direct band gap type semiconductor is required

Test: Electronic Devices - 2 - Question 12

If individual JFET has IDSS = 5 mA and pinch-off voltage  VP0 = 3V ,  then current iD for VGS = − 0.9 V is __________ mA.

Detailed Solution for Test: Electronic Devices - 2 - Question 12

Test: Electronic Devices - 2 - Question 13

What are the states of three ideal diodes of circuit shown below:

Test: Electronic Devices - 2 - Question 14

For BJT, circuit shown assume that β of transistor is very large, if here Si transistor is used, then transistor will operate in

Detailed Solution for Test: Electronic Devices - 2 - Question 14

If β is large then transistor will be in S.R

Test: Electronic Devices - 2 - Question 15

Consider the following circuit:

Q.

If vi is as shown

then RB and RC for the circuit concerned can be _________ and _________ respectively, if ICsat = 6 mA. Assume the transistor inverter operation

Detailed Solution for Test: Electronic Devices - 2 - Question 15

Just at onset of saturation,

Test: Electronic Devices - 2 - Question 16

Consider the following circuit:

Q.

The V0 shall be represented by

Detailed Solution for Test: Electronic Devices - 2 - Question 16

Transistor is switch in inverter operation.

Test: Electronic Devices - 2 - Question 17

A BJT having β = 125 is biased at a dc collector current of 1.23 mA. The values of gm, re and rπ at the bias point are: (Assume temperature of operation = 25°C).

Detailed Solution for Test: Electronic Devices - 2 - Question 17

Test: Electronic Devices - 2 - Question 18

A properly biased JFET may be shown by one of the following figures.Choose the correct alternative:

Detailed Solution for Test: Electronic Devices - 2 - Question 18

Because of the more reverse biased drain end, the depletion width is thinner in drain side.

Test: Electronic Devices - 2 - Question 19

Shown below is the n-channel JFET in voltage divider bias arrangement.

VDD = 12 V
RS = RD = 1.8 kΩ

R1 = 100 kΩ

R2 = 400 kΩ

Q.

Gate to source voltage (VGS) is given by the quadratic equation

V2GS + PVGS + Q = 0
P and Q are respectively

Detailed Solution for Test: Electronic Devices - 2 - Question 19

Test: Electronic Devices - 2 - Question 20

Shown below is the n-channel JFET in voltage divider bias arrangement.

VDD = 12 V
RS = RD = 1.8 kΩ

R1 = 100 kΩ

R2 = 400 kΩ

Q.

The drain current iD is

Detailed Solution for Test: Electronic Devices - 2 - Question 20

Solving VGS from the obtained quadratic equation

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