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For a Pchannel Ge JFET, it is having doping concentration of N_{a} = 1.77 × 10^{15} cm^{−3} and N_{d} = 3.53 × 10^{18} per cm^{3}, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)
Q. What is value of internal pinchoff voltage?
For a Pchannel Ge JFET, it is having doping concentration of N_{a} = 1.77 × 10^{15} cm^{−3} and N_{d} = 3.53 × 10^{18} per cm3, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)
Q.
What is value of pinchoff voltage?
If saturation currents of 2 diodes are 1 µA and 2 µA.
If break down voltages of diode are same and are equal to 100 volt, what is value of current in D1.
Q.
If V = 90 volt
If saturation currents of 2 diodes are 1 µA and 2 µA.
If break down voltages of diode are same and are equal to 100 volt, what is value of current in D1.
Q.
If V = 110 volt
For Si transistor, if β ≥ 30 and I_{CBO} = 10 nA The minimum value of R, for transistor to remain in active region for v_{i} = 12 volt, is __________ kΩ.
A sample of silicon (uniformly doped ntype) at T = 300° K has the electron concentration varying linearly with distance as shown in the figure
The diffusion current is found to be −1120 A/cm^{2}. If the diffusion constant D_{n} = 35 cm^{2}/s, the electron concentration at x = 0 is
In a semiconductor sample,
where LP (hole diffusion length) = 4.8 × 10^{−4} cm
Hole diffusion coefficient DP = 20 cm^{2}/s
The hole diffusion current density at x = 0 is
In the plot of log I vs V for a semiconductor Ge diode, the slope at room temperature is _________. Assume V >> V_{T} and room temperature 27°C.
Consider a ptype semiconductor which is lightly doped i.e. condition of p >> n is not valid. p, n, n_{i} are holes, electrons and intrinsic carrier concentration respectively. Then 2n + N_{A} is ___________ if N_{A} is immobile acceptor ions concentration
According to charge neutrality,
Consider the following network
V_{L} is to be maintained at 10 V.
The correct representation of V_{L} versus R_{L} is
RLmin to turnon the zener diode
Consider the following sentences in respect of LEDs (Light emitting diodes) and semiconductor laser diode.
S1 : Only direct band gap type semiconductors are suitable for fabrication of LEDs.
S2 : Both direct band gap type and indirect band gap type semiconductors are suitable for fabrication of semiconductor laser diode.
Choose the best alternative
For the fabrication of semiconductor laser diode, direct band gap type semiconductor is required
If individual JFET has I_{DSS} = 5 mA and pinchoff voltage V_{P0} = 3V , then current iD for V_{GS} = − 0.9 V is __________ mA.
What are the states of three ideal diodes of circuit shown below:
For BJT, circuit shown assume that β of transistor is very large, if here Si transistor is used, then transistor will operate in
If β is large then transistor will be in S.R
Consider the following circuit:
Q.
If v_{i} is as shown
then R_{B} and R_{C} for the circuit concerned can be _________ and _________ respectively, if I_{Csat} = 6 mA. Assume the transistor inverter operation
Just at onset of saturation,
Consider the following circuit:
Q.
The V_{0} shall be represented by
Transistor is switch in inverter operation.
A BJT having β = 125 is biased at a dc collector current of 1.23 mA. The values of g_{m}, r_{e} and r_{π} at the bias point are: (Assume temperature of operation = 25°C).
A properly biased JFET may be shown by one of the following figures.Choose the correct alternative:
Because of the more reverse biased drain end, the depletion width is thinner in drain side.
Shown below is the nchannel JFET in voltage divider bias arrangement.
V_{DD} = 12 V
R_{S} = R_{D} = 1.8 kΩ
R_{1} = 100 kΩ
R_{2} = 400 kΩ
Q.
Gate to source voltage (V_{GS}) is given by the quadratic equation
V^{2}_{GS} + PV_{GS} + Q = 0
P and Q are respectively
Shown below is the nchannel JFET in voltage divider bias arrangement.
V_{DD} = 12 V
R_{S} = R_{D} = 1.8 kΩ
R_{1} = 100 kΩ
R_{2} = 400 kΩ
Q.
The drain current iD is
Solving VGS from the obtained quadratic equation
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