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For a Pchannel Ge JFET, it is having doping concentration of N_{a} = 1.77 × 10^{15} cm^{−3} and N_{d} = 3.53 × 10^{18} per cm^{3}, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)
Q. What is value of internal pinchoff voltage?
For a Pchannel Ge JFET, it is having doping concentration of N_{a} = 1.77 × 10^{15} cm^{−3} and N_{d} = 3.53 × 10^{18} per cm3, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)
Q.
What is value of pinchoff voltage?
If saturation currents of 2 diodes are 1 µA and 2 µA.
If break down voltages of diode are same and are equal to 100 volt, what is value of current in D1.
Q.
If V = 90 volt
If saturation currents of 2 diodes are 1 µA and 2 µA.
If break down voltages of diode are same and are equal to 100 volt, what is value of current in D1.
Q.
If V = 110 volt
For Si transistor, if β ≥ 30 and I_{CBO} = 10 nA The minimum value of R, for transistor to remain in active region for v_{i} = 12 volt, is __________ kΩ.
A sample of silicon (uniformly doped ntype) at T = 300° K has the electron concentration varying linearly with distance as shown in the figure
The diffusion current is found to be −1120 A/cm^{2}. If the diffusion constant D_{n} = 35 cm^{2}/s, the electron concentration at x = 0 is
In a semiconductor sample,
where LP (hole diffusion length) = 4.8 × 10^{−4} cm
Hole diffusion coefficient DP = 20 cm^{2}/s
The hole diffusion current density at x = 0 is
In the plot of log I vs V for a semiconductor Ge diode, the slope at room temperature is _________. Assume V >> V_{T} and room temperature 27°C.
Consider a ptype semiconductor which is lightly doped i.e. condition of p >> n is not valid. p, n, n_{i} are holes, electrons and intrinsic carrier concentration respectively. Then 2n + N_{A} is ___________ if N_{A} is immobile acceptor ions concentration
Consider the following network
V_{L} is to be maintained at 10 V.
The correct representation of V_{L} versus R_{L} is
Consider the following sentences in respect of LEDs (Light emitting diodes) and semiconductor laser diode.
S1 : Only direct band gap type semiconductors are suitable for fabrication of LEDs.
S2 : Both direct band gap type and indirect band gap type semiconductors are suitable for fabrication of semiconductor laser diode.
Choose the best alternative
If individual JFET has I_{DSS} = 5 mA and pinchoff voltage V_{P0} = 3V , then current iD for V_{GS} = − 0.9 V is __________ mA.
What are the states of three ideal diodes of circuit shown below:
For BJT, circuit shown assume that β of transistor is very large, if here Si transistor is used, then transistor will operate in
Consider the following circuit:
Q.
If v_{i} is as shown
then R_{B} and R_{C} for the circuit concerned can be _________ and _________ respectively, if I_{Csat} = 6 mA. Assume the transistor inverter operation
Consider the following circuit:
Q.
The V_{0} shall be represented by
A BJT having β = 125 is biased at a dc collector current of 1.23 mA. The values of g_{m}, r_{e} and r_{π} at the bias point are: (Assume temperature of operation = 25°C).
A properly biased JFET may be shown by one of the following figures.Choose the correct alternative:
Shown below is the nchannel JFET in voltage divider bias arrangement.
V_{DD} = 12 V
R_{S} = R_{D} = 1.8 kΩ
R_{1} = 100 kΩ
R_{2} = 400 kΩ
Q.
Gate to source voltage (V_{GS}) is given by the quadratic equation
V^{2}_{GS} + PV_{GS} + Q = 0
P and Q are respectively
Shown below is the nchannel JFET in voltage divider bias arrangement.
V_{DD} = 12 V
R_{S} = R_{D} = 1.8 kΩ
R_{1} = 100 kΩ
R_{2} = 400 kΩ
Q.
The drain current iD is
24 docs263 tests

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24 docs263 tests

Test: Communication System Test  26 ques 
Test: EMFT Test  25 ques 
Test: Enginering Mathematics  1 Test  15 ques 
Test: Engineering Mathematics  2 Test  20 ques 
Test: Engineering Mathematics & General Aptitude  1 Test  15 ques 