A sample of germanium is doped to the extent of 10^{14} donor atoms/cm^{3} and 7 x 10^{13} acceptor atoms/cm^{3}. The resistivity of pure germanium is 60 Ω cm. If the applied electric field is 2V/cm, then the total conduction current density is given by
An abrupt pn junction diode is formed with two sides of resistivities 2 Ω cm in the pside and 1 Ω cm on the nside. The height of potential energy barrier for Ge (germanium) is
An ideal pchannel MOSFET has the parameters. W = 15 μm, μ_{p} = 300 cm^{2}A/ sec, L = 15 [μm, t_{ox} = 350 A° and V_{T} = 0.80 V. If transistor is operating in non saturation region at V_{SD} = 0.5 V, then the value of g_{m} is ____________ μS
A Varactor diode has depletion capacitance given by
where V is the bias voltage on the diode in volts. The diode is placed in parallel with a 0.75 (μH inductor which forms part of the frequency modulator. The required bias voltage so that the inductor diode combination resonates at 100 MHz is given by
Figure shown is a battery charging circuit
If V_{s} = 120 sinωt, the conduction angle of the diode D is given by (i.e. in positive half cycle for how much total angle it conducts)
If the magnitude of the zener voltage is 4.9 V, what will be the current in the circuit? (The reverse saturation current is 5 μA).
In the BJT current source shown in figure, the diode voltage and the transistor base to emitter voltage are equal. If base current is neglected then collector current is __________ mA
Two pn germanium diodes are connected in series opposing. A 5V battery is impressed upon this series arrangement.
The voltage across reverse bias pn junction (Assume that the magnitude of the zener voltage is greater than 5V.
The parameters of an FET are g_{m} = 3 mA/V, r_{d} = 30 k, R_{L} = 3k as an source follower load. The output impedance is given by
If R_{2} is replaced by a capacitor, then circuit behaves as
The Nchannel FET having l_{DSS} = 1 mA V_{p} = 1 V. The value of R_{1} when quiescent drain to ground voltage is 10 V
Diode current in circuit below for R = 20 kΩ is? When
The ramp signal m(t) = at is applied to a delta modulator with sampling period “Ts” and step size “δ” then slope over load distortion would occur if,
Consider the transistor circuit given below having an ideal diode:
Q.
The minimum value of h_{fe} required neglecting saturation operation and assuming an ideal diode is
Consider the transistor circuit given below having an ideal diode:
Q.
The maximum temperature at which the inverter would operate properly if the reverse saturation current at 25°C is 5 xA is
In a PCM system , if the quantization levels are increased from 2 to 16, the relative BW requirement will
A random variable has following probability function.
Q.
Value of a is
A random variable has following probability function.
Q.
Value of P (X < 4)
For a low pass filter circuit shown below if auto correlation function of input process x(t) is given by, = 5 δ(t) then,
Q.
PSD of the output random process is
For a low pass filter circuit shown below if auto correlation function of input process x(t) is given by, = 5 δ(t) then,
Q.
Average power of output random process is
E(x) for joint probability function of 2 discrete random variables x and y given as
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