A voltage V = 4 sin ωt is applied to the terminals A and B of the circuit shown in figure. The diodes are assumed to be ideal. The impedance offered by the circuit across the terminals A and B in kilo-ohms is
Consider the following limiter circuit an input voltage V| = 10.5 sinlOOnt is applied. Assume that the diode drop is 0.7 V in forward bias. The zener breakdown voltage is 6.3 V.
The maximum and minimum values of the output voltage respectively are
For +ve value of Vi, D1 is F.B and zener diode regulates the voltage at 6.3 V across it.
V0 = 6.3 + 0.7 = 7 V
and for negative half of V:, D2 is forward biased.
' V0 = -0.7 V
In the saturation region of a BJT (Bipolar Junction Transistor)
Both junctions could be forward biased.
Given below is the Ic Vs VCE characteristic of two npn transistor P and Q having current gains β1 and β2 respectively.
Hard lines: Characteristics of P Dashed lines: Characteristics of Q
Which of the following is true?
β of Q should be >> β of P.
The thermal run-away in a CE-transistor amplifier can be prevented by biasing in such a wav that.
It is derived from the basic condition.
IDSS = 8 mA Vp = -5 V, Assume Gate current » 0 all the capacitance used are of very large value. The voltage gain Av, is
If the differential voltage gain and the common mode voltage gain of a differential amplifier are 50-dB and 2-dB resDectivelv. then its common mode rejection ratio is
Consider the following op-amp circuit:
Op-amp slew rate is SR = 0.5 V/μsec.
Maximum frequency where the op-amp can operate is
Consider the following op-amp circuit with multiple stages:
I0 = kIi (current controlled current source).
Shown below is a positive feedback arrangement to generate sinusoidal oscillation